Assignee
ABOU-KHALIL MICHEL J
US·17 granted patents·79 citations·filing 2007–2012
Top patents by PatentIndex Score
17 records- 0194US8445355B2Metal-insulator-metal capacitors with high capacitance densityABOU-KHALIL MICHEL J·Filed 2010·Granted May 21, 2013·18 cites·22 claims
- 0290US8299544B2Field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methodsABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·12 cites·10 claims
- 0384US8686508B2Structures, methods and applications for electrical pulse anneal processesABOU-KHALIL MICHEL J·Filed 2009·Granted Apr 1, 2014·5 cites·9 claims
- 0483US8891212B2RC-triggered semiconductor controlled rectifier for ESD protection of signal padsABOU-KHALIL MICHEL J·Filed 2011·Granted Nov 18, 2014·7 cites·24 claims
- 0582US8101505B2Programmable electrical fuseABOU-KHALIL MICHEL J·Filed 2008·Granted Jan 24, 2012·9 cites·13 claims
- 0681US8669146B2Semiconductor structures with thinned junctions and methods of manufactureABOU-KHALIL MICHEL J·Filed 2011·Granted Mar 11, 2014·5 cites·15 claims
- 0780US8299547B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric platesABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·5 cites·24 claims
- 0879US8796731B2Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structureABOU-KHALIL MICHEL J·Filed 2010·Granted Aug 5, 2014·5 cites·23 claims
- 0977US8503140B2Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structuresABOU-KHALIL MICHEL J·Filed 2010·Granted Aug 6, 2013·3 cites·15 claims
- 1072US8634174B2Gate dielectric breakdown protection during ESD eventsABOU-KHALIL MICHEL J·Filed 2011·Granted Jan 21, 2014·3 cites·14 claims
- 1167US8421128B2Semiconductor device heat dissipation structureABOU-KHALIL MICHEL J·Filed 2007·Granted Apr 16, 2013·3 cites·19 claims
- 1265US8637353B2Through silicon via repairABOU-KHALIL MICHEL J·Filed 2011·Granted Jan 28, 2014·1 cites·5 claims
- 1364US8642452B2Semiconductor-on-insulator device with asymmetric structureABOU-KHALIL MICHEL J·Filed 2011·Granted Feb 4, 2014·1 cites·20 claims
- 1462US8217455B2Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structuresABOU-KHALIL MICHEL J·Filed 2008·Granted Jul 10, 2012·2 cites·14 claims
- 1552US8482067B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistorABOU-KHALIL MICHEL J·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 1651US8906751B2Silicon controlled rectifiers (SCR), methods of manufacture and design structuresABOU-KHALIL MICHEL J·Filed 2011·Granted Dec 9, 2014·0 cites·13 claims
- 1740US8901676B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETsABOU-KHALIL MICHEL J·Filed 2011·Granted Dec 2, 2014·0 cites·20 claims
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