Assignee
ACORN SEMI LLC
US·24 granted patents·9 pending applications·15 citations·filing 2019–2025
Top patents by PatentIndex Score
33 records- 0197US11728624B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2022·Granted Aug 15, 2023·2 cites·50 claims
- 0297US11462643B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2020·Granted Oct 4, 2022·3 cites·21 claims
- 0397US2026059795A1Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier heightACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 0495US10833199B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2019·Granted Nov 10, 2020·7 cites·34 claims
- 0593US2025366078A1Relating to soi wafers and devices with buried stressorsACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 0689US12557347B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2024·Granted Feb 17, 2026·0 cites·27 claims
- 0789US12477776B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2024·Granted Nov 18, 2025·0 cites·38 claims
- 0888US2025275218A1Metal contacts to group iv semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 0987US12336263B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Jun 17, 2025·0 cites·14 claims
- 1087US2023344200A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2023·Application pending·0 cites
- 1186US12402365B2SOI wafers and devices with buried stressorsACORN SEMI LLC·Filed 2023·Granted Aug 26, 2025·0 cites·29 claims
- 1285US11843040B2MIS contact structure with metal oxide conductorACORN SEMI LLC·Filed 2020·Granted Dec 12, 2023·1 cites·18 claims
- 1385US11804533B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2023·Granted Oct 31, 2023·0 cites·8 claims
- 1485US10950707B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN SEMI LLC·Filed 2020·Granted Mar 16, 2021·1 cites·23 claims
- 1584US2024072150A1Mis contact structure with metal oxide conductorACORN SEMI LLC·Filed 2023·Application pending·0 cites
- 1683US11978800B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2022·Granted May 7, 2024·0 cites·14 claims
- 1782US10872964B2MIS contact structure with metal oxide conductorACORN SEMI LLC·Filed 2020·Granted Dec 22, 2020·1 cites·30 claims
- 1881US12034078B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN SEMI LLC·Filed 2022·Granted Jul 9, 2024·0 cites·8 claims
- 1980US11791411B2Relating to SOI wafers and devices with buried stressorsACORN SEMI LLC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 2079US11355613B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN SEMI LLC·Filed 2021·Granted Jun 7, 2022·0 cites·11 claims
- 2179US2025158362A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 2279US2025167523A1Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 2377US11610974B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 2477US11476364B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2021·Granted Oct 18, 2022·0 cites·28 claims
- 2576US11271370B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN SEMI LLC·Filed 2020·Granted Mar 8, 2022·0 cites·21 claims
- 2676US11018237B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN SEMI LLC·Filed 2020·Granted May 25, 2021·0 cites·12 claims
- 2776US10937880B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN SEMI LLC·Filed 2020·Granted Mar 2, 2021·0 cites·28 claims
- 2875US11322615B2SOI wafers and devices with buried stressorACORN SEMI LLC·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 2974US11056569B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN SEMI LLC·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 3073US10950727B2Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layerACORN SEMI LLC·Filed 2020·Granted Mar 16, 2021·0 cites·19 claims
- 3172US10879366B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN SEMI LLC·Filed 2019·Granted Dec 29, 2020·0 cites·29 claims
- 3255US2025321392A1Electrical and optical interconnect links combined in a hybrid interposerACORN SEMI LLC·Filed 2025·Application pending·0 cites
- 3355US2023093111A1MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRENCHES BETWEEN GATESACORN SEMI LLC·Filed 2022·Application pending·0 cites
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