Assignee
ACORN TECH INC
US·69 granted patents·5 pending applications·1,536 citations·filing 1994–2019
Top patents by PatentIndex Score
74 records- 0199US10090395B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2018·Granted Oct 2, 2018·18 cites·30 claims
- 0299US9461167B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2016·Granted Oct 4, 2016·18 cites·16 claims
- 0399US9209261B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2015·Granted Dec 8, 2015·22 cites·30 claims
- 0498US9905691B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2016·Granted Feb 27, 2018·16 cites·30 claims
- 0598US9620611B1MIS contact structure with metal oxide conductorACORN TECH INC·Filed 2016·Granted Apr 11, 2017·16 cites·19 claims
- 0697US9270083B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2015·Granted Feb 23, 2016·10 cites·30 claims
- 0797US7884003B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2008·Granted Feb 8, 2011·26 cites·7 claims
- 0897US7112478B2Insulated gate field effect transistor having passivated Schottky barriers to the channelACORN TECH INC·Filed 2004·Granted Sep 26, 2006·84 cites·13 claims
- 0997US6891234B1Transistor with workfunction-induced charge layerACORN TECH INC·Filed 2004·Granted May 10, 2005·199 cites·41 claims
- 1096US9036672B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2014·Granted May 19, 2015·12 cites·20 claims
- 1196US7700416B1Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Apr 20, 2010·53 cites·36 claims
- 1296US7462860B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2005·Granted Dec 9, 2008·23 cites·1 claims
- 1396US7338834B2Strained silicon with elastic edge relaxationACORN TECH INC·Filed 2006·Granted Mar 4, 2008·38 cites·26 claims
- 1496US7084423B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2002·Granted Aug 1, 2006·62 cites·69 claims
- 1595US10170627B2Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier heightACORN TECH INC·Filed 2017·Granted Jan 1, 2019·9 cites·26 claims
- 1695US9362376B2Metal contacts to group IV semiconductors by inserting interfacial atomic monolayersACORN TECH INC·Filed 2012·Granted Jun 7, 2016·13 cites·26 claims
- 1795US8916437B2Insulated gate field effect transistor having passivated schottky barriers to the channelACORN TECH INC·Filed 2013·Granted Dec 23, 2014·13 cites·2 claims
- 1895US8766336B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2012·Granted Jul 1, 2014·11 cites·84 claims
- 1995US8377767B2Insulated gate field effect transistor having passivated schottky barriers to the channelACORN TECH INC·Filed 2011·Granted Feb 19, 2013·14 cites·17 claims
- 2095US7883980B2Insulated gate field effect transistor having passivated schottky barriers to the channelACORN TECH INC·Filed 2006·Granted Feb 8, 2011·23 cites·12 claims
- 2194US7851325B1Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2008·Granted Dec 14, 2010·23 cites·19 claims
- 2294US5961582ADistributed and portable execution environmentACORN TECH INC·Filed 1994·Granted Oct 5, 1999·252 cites·7 claims
- 2393US10193307B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2017·Granted Jan 29, 2019·4 cites·21 claims
- 2492US10505047B2Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier heightACORN TECH INC·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 2592US7176483B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2004·Granted Feb 13, 2007·66 cites·10 claims
- 2691US10147798B2MIS contact structure with metal oxide conductorACORN TECH INC·Filed 2017·Granted Dec 4, 2018·4 cites·20 claims
- 2791US6833556B2Insulated gate field effect transistor having passivated schottky barriers to the channelACORN TECH INC·Filed 2003·Granted Dec 21, 2004·36 cites·32 claims
- 2891US6594103B1Read channel generating absolute value servo signalACORN TECH INC·Filed 1999·Granted Jul 15, 2003·75 cites·10 claims
- 2989US10749778B2Communication system determining time of arrival using matching pursuitACORN TECH INC·Filed 2015·Granted Aug 18, 2020·8 cites·26 claims
- 3089US10388748B2Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2017·Granted Aug 20, 2019·2 cites·14 claims
- 3189US7756196B1Efficient adaptive filters for CDMA wireless systemsACORN TECH INC·Filed 2005·Granted Jul 13, 2010·16 cites·10 claims
- 3289US6525897B2Apparatus for developing a dynamic servo signal from data in a magnetic disc drive and methodACORN TECH INC·Filed 2001·Granted Feb 25, 2003·24 cites·34 claims
- 3388US9812542B2Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctionsACORN TECH INC·Filed 2016·Granted Nov 7, 2017·2 cites·18 claims
- 3488US7816240B2Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)ACORN TECH INC·Filed 2007·Granted Oct 19, 2010·14 cites·2 claims
- 3587US7972916B1Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recessesACORN TECH INC·Filed 2008·Granted Jul 5, 2011·14 cites·26 claims
- 3686US10833194B2SOI wafers and devices with buried stressorACORN TECH INC·Filed 2019·Granted Nov 10, 2020·2 cites·5 claims
- 3786US7639738B2Efficient channel shortening in communication systemsACORN TECH INC·Filed 2006·Granted Dec 29, 2009·19 cites·13 claims
- 3884US6198113B1Electrostatically operated tunneling transistorACORN TECH INC·Filed 1999·Granted Mar 6, 2001·79 cites·22 claims
- 3983US9583614B2Insulated gate field effect transistor having passivated schottky barriers to the channelACORN TECH INC·Filed 2014·Granted Feb 28, 2017·3 cites·4 claims
- 4083US7902029B2Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistorACORN TECH INC·Filed 2005·Granted Mar 8, 2011·10 cites·20 claims
- 4183US7382021B2Insulated gate field-effect transistor having III-VI source/drain layer(s)ACORN TECH INC·Filed 2004·Granted Jun 3, 2008·32 cites·19 claims
- 4280US8003486B2Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layerACORN TECH INC·Filed 2010·Granted Aug 23, 2011·4 cites·13 claims
- 4378US8361868B2Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantationACORN TECH INC·Filed 2010·Granted Jan 29, 2013·5 cites·9 claims
- 4477US10727647B2Tensile strained semiconductor photon emission and detection devices and integrated photonics systemACORN TECH INC·Filed 2018·Granted Jul 28, 2020·0 cites·15 claims
- 4576US6545836B1Servo control apparatus and method using absolute value input signalsACORN TECH INC·Filed 1999·Granted Apr 8, 2003·59 cites·23 claims
- 4674US9029686B2Strain-enhanced silicon photon-to-electron conversion devicesACORN TECH INC·Filed 2013·Granted May 12, 2015·1 cites·12 claims
- 4774US8361867B2Biaxial strained field effect transistor devicesACORN TECH INC·Filed 2010·Granted Jan 29, 2013·3 cites·15 claims
- 4874US7612365B2Strained silicon with elastic edge relaxationACORN TECH INC·Filed 2008·Granted Nov 3, 2009·3 cites·25 claims
- 4973US6381088B1Apparatus for developing a dynamic servo signal from data in a magnetic disc drive and methodACORN TECH INC·Filed 1998·Granted Apr 30, 2002·22 cites·70 claims
- 5072US8386549B1Reduced complexity adaptive multistage wiener filterACORN TECH INC·Filed 2008·Granted Feb 26, 2013·6 cites·6 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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