Assignee
ACRIAN INC
US·4 granted patents·180 citations·filing 1982–1986
Top patents by PatentIndex Score
4 records- 0192US4738936AMethod of fabrication lateral FET structure having a substrate to source contactACRIAN INC·Filed 1986·Granted Apr 19, 1988·103 cites·5 claims
- 0285US4419811AMethod of fabricating mesa MOSFET using overhang maskACRIAN INC·Filed 1982·Granted Dec 13, 1983·45 cites·4 claims
- 0362US4459605AVertical MESFET with guardringACRIAN INC·Filed 1982·Granted Jul 10, 1984·17 cites·3 claims
- 0448US4625388AMethod of fabricating mesa MOSFET using overhang mask and resulting structureACRIAN INC·Filed 1983·Granted Dec 2, 1986·15 cites·13 claims
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