Assignee
AIBA AKIHIRO
JP·2 granted patents·1 citations·filing 2008–2008
Top patents by PatentIndex Score
2 records- 0173US8216438B2Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesionAIBA AKIHIRO·Filed 2008·Granted Jul 10, 2012·1 cites·9 claims
- 0264US8252157B2Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anodeAIBA AKIHIRO·Filed 2008·Granted Aug 28, 2012·0 cites·17 claims
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