Assignee
AIGO TAKASHI
JP·3 granted patents·2 pending applications·7 citations·filing 2010–2012
Top patents by PatentIndex Score
5 records- 0177US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0264US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 0345US8927396B2Production process of epitaxial silicon carbide single crystal substrateAIGO TAKASHI·Filed 2011·Granted Jan 6, 2015·0 cites·7 claims
- 0442US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
- 0537US2013320357A1Epitaxial silicon carbide single crystal substrate and method for producing sameAIGO TAKASHI·Filed 2012·Application pending·0 cites
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