Assignee
ALTIS SEMICONDUCTOR SNC
DE·17 granted patents·3 pending applications·431 citations·filing 2004–2013
Top patents by PatentIndex Score
20 records- 0195US7212432B2Resistive memory cell random access memory device and method of fabricationALTIS SEMICONDUCTOR SNC·Filed 2004·Granted May 1, 2007·115 cites·12 claims
- 0292US7180113B2Double-decker MRAM cell with rotated reference layer magnetizationsALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Feb 20, 2007·36 cites·14 claims
- 0392US7099186B1Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricatingALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Aug 29, 2006·36 cites·20 claims
- 0491US7180160B2MRAM storage deviceALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Feb 20, 2007·73 cites·18 claims
- 0591US7092284B2MRAM with magnetic via for storage of information and field sensorALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Aug 15, 2006·58 cites·22 claims
- 0688US7313043B2Magnetic Memory ArrayALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Dec 25, 2007·20 cites·23 claims
- 0774US7154771B2Method of switching an MRAM cell comprising bidirectional current generationALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Dec 26, 2006·9 cites·18 claims
- 0874US7068533B2Resistive memory cell configuration and method for sensing resistance valuesALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jun 27, 2006·21 cites·20 claims
- 0973US7602032B2Memory having cap structure for magnetoresistive junction and method for structuring the sameALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Oct 13, 2009·8 cites·12 claims
- 1067US7061797B1Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jun 13, 2006·14 cites·6 claims
- 1166US7075807B2Magnetic memory with static magnetic offset fieldALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jul 11, 2006·14 cites·19 claims
- 1262US7130206B2Content addressable memory cell including resistive memory elementsALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Oct 31, 2006·11 cites·19 claims
- 1355US7200032B2MRAM with vertical storage element and field sensorALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Apr 3, 2007·8 cites·25 claims
- 1449US7088611B2MRAM with switchable ferromagnetic offset layerALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Aug 8, 2006·6 cites·19 claims
- 1546US2013270505A1Microelectronic device with programmable memory, including a layer of doped chalcogenide that withstands high temperaturesALTIS SEMICONDUCTOR SNC·Filed 2012·Application pending·0 cites
- 1644US7272028B2MRAM cell with split conductive linesALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Sep 18, 2007·0 cites·21 claims
- 1736US7127954B2Method and device for measuring the flow rate of a fluidALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Oct 31, 2006·2 cites·19 claims
- 1834US2014021433A1Microelectronic device with programmable memoryALTIS SEMICONDUCTOR SNC·Filed 2013·Application pending·0 cites
- 1930US7754506B2Method of fabricating submicron suspended objects and application to the mechanical characterization of said objectsALTIS SEMICONDUCTOR SNC·Filed 2006·Granted Jul 13, 2010·0 cites·22 claims
- 2022US2013273725A1Method of fabricating a structured semiconductor substrateALTIS SEMICONDUCTOR SNC·Filed 2012·Application pending·0 cites
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