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ARIMA OPTOELECTRONICS CORP
TW25 patents
Top patents by PatentIndex Score
US6614170B2Sep 2, 2003
Light emitting diode with light conversion using scattering optical media
ARIMA OPTOELECTRONICS CORP80 citations96
US6614060B1Sep 2, 2003
Light emitting diodes with asymmetric resonance tunnelling
ARIMA OPTOELECTRONICS CORP137 citations95
US6395564B1May 28, 2002
Method for fabricating a light-emitting device with uniform color temperature
ARIMA OPTOELECTRONICS CORP100 citations95
US6455870B1Sep 24, 2002
Unipolar light emitting devices based on III-nitride semiconductor superlattices
ARIMA OPTOELECTRONICS CORP76 citations93
US7291874B2Nov 6, 2007
Laser dicing apparatus for a gallium arsenide wafer and method thereof
ARIMA OPTOELECTRONICS CORP32 citations92
US6344665B1Feb 5, 2002
Electrode structure of compound semiconductor device
ARIMA OPTOELECTRONICS CORP52 citations90
US6130445AOct 10, 2000
LED with AlGaInP Bragg layer
ARIMA OPTOELECTRONICS CORP23 citations90
US7177331B2Feb 13, 2007
Laser diode module with a built-in high-frequency modulation IC
ARIMA OPTOELECTRONICS CORP14 citations83
US6577661B1Jun 10, 2003
Semiconductor laser with lateral light confinement by polygonal surface optical grating resonator
ARIMA OPTOELECTRONICS CORP16 citations82
US6417522B1Jul 9, 2002
Led with alternated strain layer
ARIMA OPTOELECTRONICS CORP17 citations82
US6677903B2Jan 13, 2004
Mobile communication device having multiple frequency band antenna
ARIMA OPTOELECTRONICS CORP50 citations81
US6753818B2Jun 22, 2004
Concealed antenna for mobile communication device
ARIMA OPTOELECTRONICS CORP12 citations73
US6687275B2Feb 3, 2004
Resonating cavity system for broadly tunable multi-wavelength semiconductor lasers
ARIMA OPTOELECTRONICS CORP10 citations73
US7061026B2Jun 13, 2006
High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
ARIMA OPTOELECTRONICS CORP9 citations71
US6396862B1May 28, 2002
LED with spreading layer
ARIMA OPTOELECTRONICS CORP12 citations71
US6380050B1Apr 30, 2002
Method of epitaxially growing a GaN semiconductor layer
ARIMA OPTOELECTRONICS CORP11 citations71
US7199390B2Apr 3, 2007
Window interface layer of a light-emitting diode
ARIMA OPTOELECTRONICS CORP7 citations63
US7023892B2Apr 4, 2006
Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection
ARIMA OPTOELECTRONICS CORP2 citations61
US6924511B2Aug 2, 2005
Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator
ARIMA OPTOELECTRONICS CORP4 citations61
US6303485B1Oct 16, 2001
Method of producing gallium nitride-based III-V Group compound semiconductor device
ARIMA OPTOELECTRONICS CORP3 citations57
US7781755B2Aug 24, 2010
Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode
ARIMA OPTOELECTRONICS CORP5 citations55
US7704770B2Apr 27, 2010
Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode
ARIMA OPTOELECTRONICS CORP5 citations55
US7677782B2Mar 16, 2010
LED flat lamp
ARIMA OPTOELECTRONICS CORP4 citations53
US7177333B2Feb 13, 2007
Laser diode device with an APC inside the cap
ARIMA OPTOELECTRONICS CORP5 citations53
US7397182B2Jul 8, 2008
Display module using blue-ray or ultraviolet-ray light sources
ARIMA OPTOELECTRONICS CORP0 citations52