Assignee
ASM IP HOLDING BV
NL·1,198 granted patents·839 pending applications·83,122 citations·filing 2012–2025
Top patents by PatentIndex Score
2,037 records- 0199US11389824B2Vapor phase deposition of organic filmsASM IP HOLDING BV·Filed 2020·Granted Jul 19, 2022·11 cites·19 claims
- 0299US11387107B2Deposition of organic filmsASM IP HOLDING BV·Filed 2020·Granted Jul 12, 2022·10 cites·20 claims
- 0399US10695794B2Vapor phase deposition of organic filmsASM IP HOLDING BV·Filed 2015·Granted Jun 30, 2020·53 cites·27 claims
- 0499US10662525B2Thin film deposition apparatusASM IP HOLDING BV·Filed 2016·Granted May 26, 2020·282 cites·18 claims
- 0599US10600637B2Formation of SiOC thin filmsASM IP HOLDING BV·Filed 2017·Granted Mar 24, 2020·353 cites·19 claims
- 0699US10510529B2Formation of SiOCN thin filmsASM IP HOLDING BV·Filed 2017·Granted Dec 17, 2019·287 cites·20 claims
- 0799US10443123B2Dual selective depositionASM IP HOLDING BV·Filed 2018·Granted Oct 15, 2019·46 cites·21 claims
- 0899US10428419B2Combination CVD/ALD method, source and pulse profile modificationASM IP HOLDING BV·Filed 2017·Granted Oct 1, 2019·391 cites·20 claims
- 0999US10424476B2Formation of SiOCN thin filmsASM IP HOLDING BV·Filed 2017·Granted Sep 24, 2019·289 cites·18 claims
- 1099US10388513B1Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted depositionASM IP HOLDING BV·Filed 2018·Granted Aug 20, 2019·410 cites·16 claims
- 1199US10373820B2Deposition of organic filmsASM IP HOLDING BV·Filed 2016·Granted Aug 6, 2019·61 cites·25 claims
- 1299US10343920B2Aligned carbon nanotubesASM IP HOLDING BV·Filed 2016·Granted Jul 9, 2019·412 cites·16 claims
- 1399US10340135B2Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitrideASM IP HOLDING BV·Filed 2017·Granted Jul 2, 2019·426 cites·17 claims
- 1499US10186420B2Formation of silicon-containing thin filmsASM IP HOLDING BV·Filed 2017·Granted Jan 22, 2019·472 cites·21 claims
- 1599US10179947B2Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer depositionASM IP HOLDING BV·Filed 2013·Granted Jan 15, 2019·413 cites·11 claims
- 1699US10177025B2Method and apparatus for filling a gapASM IP HOLDING BV·Filed 2016·Granted Jan 8, 2019·418 cites·19 claims
- 1799US10090316B23D stacked multilayer semiconductor memory using doped select transistor channelASM IP HOLDING BV·Filed 2016·Granted Oct 2, 2018·468 cites·13 claims
- 1899US10083836B2Formation of boron-doped titanium metal films with high work functionASM IP HOLDING BV·Filed 2015·Granted Sep 25, 2018·463 cites·20 claims
- 1999US10047435B2Dual selective depositionASM IP HOLDING BV·Filed 2015·Granted Aug 14, 2018·463 cites·52 claims
- 2099US10032792B2Semiconductor device and manufacturing method thereofASM IP HOLDING BV·Filed 2017·Granted Jul 24, 2018·463 cites·16 claims
- 2199US10023960B2Process gas management for an inductively-coupled plasma deposition reactorASM IP HOLDING BV·Filed 2017·Granted Jul 17, 2018·467 cites·7 claims
- 2299US9984869B1Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gasASM IP HOLDING BV·Filed 2017·Granted May 29, 2018·476 cites·20 claims
- 2399US9960033B1Method of depositing and etching Si-containing filmASM IP HOLDING BV·Filed 2016·Granted May 1, 2018·398 cites·19 claims
- 2499US9899405B2Semiconductor device and manufacturing method thereofASM IP HOLDING BV·Filed 2015·Granted Feb 20, 2018·464 cites·17 claims
- 2599US9895715B2Selective deposition of metals, metal oxides, and dielectricsASM IP HOLDING BV·Filed 2015·Granted Feb 20, 2018·525 cites·27 claims
- 2699US9859151B1Selective film deposition method to form air gapsASM IP HOLDING BV·Filed 2016·Granted Jan 2, 2018·467 cites·19 claims
- 2799USD802546SOuter wall of reactor for semiconductor manufacturing apparatusASM IP HOLDING BV·Filed 2016·Granted Nov 14, 2017·485 cites·1 claims
- 2899US9812319B1Method for forming film filled in trench without seam or voidASM IP HOLDING BV·Filed 2016·Granted Nov 7, 2017·486 cites·16 claims
- 2999US9793115B2Structures and devices including germanium-tin films and methods of forming sameASM IP HOLDING BV·Filed 2016·Granted Oct 17, 2017·464 cites·20 claims
- 3099US9786492B2Formation of SiOCN thin filmsASM IP HOLDING BV·Filed 2016·Granted Oct 10, 2017·65 cites·19 claims
- 3199US9786491B2Formation of SiOCN thin filmsASM IP HOLDING BV·Filed 2015·Granted Oct 10, 2017·484 cites·27 claims
- 3299USD789888SElectrode plate for semiconductor manufacturing apparatusASM IP HOLDING BV·Filed 2016·Granted Jun 20, 2017·486 cites·1 claims
- 3399US9640416B2Single-and dual-chamber module-attachable wafer-handling chamberASM IP HOLDING BV·Filed 2012·Granted May 2, 2017·485 cites·11 claims
- 3499USD785766SShower plateASM IP HOLDING BV·Filed 2016·Granted May 2, 2017·488 cites·1 claims
- 3599US9627221B1Continuous process incorporating atomic layer etchingASM IP HOLDING BV·Filed 2015·Granted Apr 18, 2017·507 cites·17 claims
- 3699US9605342B2Process gas management for an inductively-coupled plasma deposition reactorASM IP HOLDING BV·Filed 2015·Granted Mar 28, 2017·479 cites·17 claims
- 3799US9607837B1Method for forming silicon oxide cap layer for solid state diffusion processASM IP HOLDING BV·Filed 2015·Granted Mar 28, 2017·473 cites·20 claims
- 3899US9523148B1Process for deposition of titanium oxynitride for use in integrated circuit fabricationASM IP HOLDING BV·Filed 2015·Granted Dec 20, 2016·450 cites·19 claims
- 3999US9464352B2Low-oxidation plasma-assisted processASM IP HOLDING BV·Filed 2014·Granted Oct 11, 2016·463 cites·14 claims
- 4099US9455138B1Method for forming dielectric film in trenches by PEALD using H-containing gasASM IP HOLDING BV·Filed 2015·Granted Sep 27, 2016·587 cites·20 claims
- 4199US9412564B2Semiconductor reaction chamber with plasma capabilitiesASM IP HOLDING BV·Filed 2015·Granted Aug 9, 2016·496 cites·22 claims
- 4299US9396934B2Methods of forming films including germanium tin and structures and devices including the filmsASM IP HOLDING BV·Filed 2013·Granted Jul 19, 2016·494 cites·20 claims
- 4399US9396956B1Method of plasma-enhanced atomic layer etchingASM IP HOLDING BV·Filed 2015·Granted Jul 19, 2016·518 cites·16 claims
- 4499US9384987B2Metal oxide protective layer for a semiconductor deviceASM IP HOLDING BV·Filed 2014·Granted Jul 5, 2016·498 cites·20 claims
- 4599US9370863B2Anti-slip end-effector for transporting workpieceASM IP HOLDING BV·Filed 2014·Granted Jun 21, 2016·473 cites·13 claims
- 4699US9343350B2Anti-slip end effector for transporting workpiece using van der waals forceASM IP HOLDING BV·Filed 2014·Granted May 17, 2016·472 cites·15 claims
- 4799US9343297B1Method for forming multi-element thin film constituted by at least five elements by PEALDASM IP HOLDING BV·Filed 2015·Granted May 17, 2016·471 cites·20 claims
- 4899US9343343B2Method for reducing particle generation at bevel portion of substrateASM IP HOLDING BV·Filed 2014·Granted May 17, 2016·462 cites·3 claims
- 4999US9324811B2Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming sameASM IP HOLDING BV·Filed 2013·Granted Apr 26, 2016·496 cites·10 claims
- 5099USD753269STop plateASM IP HOLDING BV·Filed 2015·Granted Apr 5, 2016·479 cites·1 claims
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