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BAARS PETER
DE19 patents
Top patents by PatentIndex Score
US8735232B2May 27, 2014
Methods for forming semiconductor devices
BAARS PETER21 citations93
US8647938B1Feb 11, 2014
SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication
BAARS PETER22 citations93
US8927407B2Jan 6, 2015
Method of forming self-aligned contacts for a semiconductor device
BAARS PETER9 citations83
US8846513B2Sep 30, 2014
Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
BAARS PETER6 citations73
US8647952B2Feb 11, 2014
Encapsulation of closely spaced gate electrode structures
BAARS PETER4 citations73
US8609457B2Dec 17, 2013
Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same
BAARS PETER5 citations73
US8790975B2Jul 29, 2014
Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features
BAARS PETER6 citations72
US8853810B2Oct 7, 2014
Integrated circuits that include deep trench capacitors and methods for their fabrication
BAARS PETER2 citations63
US8575013B2Nov 5, 2013
Replacement gate fabrication methods
BAARS PETER2 citations63
US8222103B1Jul 17, 2012
Semiconductor device with embedded low-K metallization
BAARS PETER5 citations63
US9023696B2May 5, 2015
Method of forming contacts for devices with multiple stress liners
BAARS PETER3 citations61
US8293605B2Oct 23, 2012
Methods for fabricating a CMOS integrated circuit having a dual stress layer (DSL)
BAARS PETER3 citations61
US9484457B2Nov 1, 2016
Vertical floating body storage transistors formed in bulk devices and having buried sense and word lines
BAARS PETER1 citations52
US8835245B2Sep 16, 2014
Semiconductor device comprising self-aligned contact elements
BAARS PETER1 citations52
US8697557B2Apr 15, 2014
Method of removing gate cap materials while protecting active area
BAARS PETER1 citations52
US8513083B2Aug 20, 2013
Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes
BAARS PETER0 citations52
US8673696B2Mar 18, 2014
SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage
BAARS PETER0 citations49
US8883586B2Nov 11, 2014
Mol insitu Pt rework sequence
BAARS PETER0 citations48
US8987104B2Mar 24, 2015
Method of forming spacers that provide enhanced protection for gate electrode structures
BAARS PETER0 citations42