Assignee
BAARS PETER
DE·19 granted patents·5 pending applications·91 citations·filing 2005–2012
Top patents by PatentIndex Score
24 records- 0195US8735232B2Methods for forming semiconductor devicesBAARS PETER·Filed 2011·Granted May 27, 2014·21 cites·20 claims
- 0295US8647938B1SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabricationBAARS PETER·Filed 2012·Granted Feb 11, 2014·22 cites·18 claims
- 0387US8927407B2Method of forming self-aligned contacts for a semiconductor deviceBAARS PETER·Filed 2012·Granted Jan 6, 2015·9 cites·19 claims
- 0483US8790975B2Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal featuresBAARS PETER·Filed 2011·Granted Jul 29, 2014·6 cites·22 claims
- 0581US8846513B2Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fillBAARS PETER·Filed 2011·Granted Sep 30, 2014·6 cites·22 claims
- 0680US8222103B1Semiconductor device with embedded low-K metallizationBAARS PETER·Filed 2011·Granted Jul 17, 2012·5 cites·24 claims
- 0779US8609457B2Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making sameBAARS PETER·Filed 2011·Granted Dec 17, 2013·5 cites·16 claims
- 0878US8647952B2Encapsulation of closely spaced gate electrode structuresBAARS PETER·Filed 2010·Granted Feb 11, 2014·4 cites·27 claims
- 0973US8293605B2Methods for fabricating a CMOS integrated circuit having a dual stress layer (DSL)BAARS PETER·Filed 2011·Granted Oct 23, 2012·3 cites·14 claims
- 1070US9023696B2Method of forming contacts for devices with multiple stress linersBAARS PETER·Filed 2011·Granted May 5, 2015·3 cites·20 claims
- 1170US8575013B2Replacement gate fabrication methodsBAARS PETER·Filed 2011·Granted Nov 5, 2013·2 cites·18 claims
- 1266US8853810B2Integrated circuits that include deep trench capacitors and methods for their fabricationBAARS PETER·Filed 2011·Granted Oct 7, 2014·2 cites·9 claims
- 1363US8697557B2Method of removing gate cap materials while protecting active areaBAARS PETER·Filed 2011·Granted Apr 15, 2014·1 cites·17 claims
- 1460US9484457B2Vertical floating body storage transistors formed in bulk devices and having buried sense and word linesBAARS PETER·Filed 2012·Granted Nov 1, 2016·1 cites·10 claims
- 1560US8835245B2Semiconductor device comprising self-aligned contact elementsBAARS PETER·Filed 2012·Granted Sep 16, 2014·1 cites·20 claims
- 1652US8513083B2Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processesBAARS PETER·Filed 2011·Granted Aug 20, 2013·0 cites·25 claims
- 1748US8883586B2Mol insitu Pt rework sequenceBAARS PETER·Filed 2011·Granted Nov 11, 2014·0 cites·12 claims
- 1844US2006255384A1Memory device and method of manufacturing the sameBAARS PETER·Filed 2005·Application pending·0 cites
- 1943US2008151592A1Semiconductor device and method of fabricating a semiconductor deviceBAARS PETER·Filed 2006·Application pending·0 cites
- 2040US8673696B2SOI semiconductor device comprising a substrate diode with reduced metal silicide leakageBAARS PETER·Filed 2012·Granted Mar 18, 2014·0 cites·17 claims
- 2139US8987104B2Method of forming spacers that provide enhanced protection for gate electrode structuresBAARS PETER·Filed 2011·Granted Mar 24, 2015·0 cites·18 claims
- 2238US2013193489A1Integrated circuits including copper local interconnects and methods for the manufacture thereofBAARS PETER·Filed 2012·Application pending·0 cites
- 2338US2007190773A1Method of fabricating a semiconductor deviceBAARS PETER·Filed 2006·Application pending·0 cites
- 2437US2013049123A1Semiconductor Device with DRAM Word Lines and Gate Electrodes in Non-Memory Regions of the Device Comprised of a Metal, and Methods of Making SameBAARS PETER·Filed 2011·Application pending·0 cites
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