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BAHL SANDEEP
US3 patents
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US8513703B2Aug 20, 2013
Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
BAHL SANDEEP6 citations69
US8723226B2May 13, 2014
Manufacturable enhancement-mode group III-N HEMT with a reverse polarization cap
BAHL SANDEEP3 citations57
US8502273B2Aug 6, 2013
Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same
BAHL SANDEEP0 citations38