Assignee
BAHL SANDEEP R
US·4 granted patents·3 pending applications·2 citations·filing 2005–2011
Top patents by PatentIndex Score
7 records- 0163US8304320B2Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopantsBAHL SANDEEP R·Filed 2011·Granted Nov 6, 2012·1 cites·27 claims
- 0258US8946780B2Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layerBAHL SANDEEP R·Filed 2011·Granted Feb 3, 2015·1 cites·12 claims
- 0350US8592292B2Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substratesBAHL SANDEEP R·Filed 2010·Granted Nov 26, 2013·0 cites·1 claims
- 0447US2010244152A1Configuration and fabrication of semiconductor structure having extended-drain field-effect transistorBAHL SANDEEP R·Filed 2009·Application pending·0 cites
- 0543US2007052049A1Integrated opto-electric SPR sensorBAHL SANDEEP R·Filed 2005·Application pending·0 cites
- 0639US8318563B2Growth of group III nitride-based structures and integration with conventional CMOS processing toolsBAHL SANDEEP R·Filed 2010·Granted Nov 27, 2012·0 cites·17 claims
- 0735US2012280281A1Gallium nitride or other group iii/v-based schottky diodes with improved operating characteristicsBAHL SANDEEP R·Filed 2011·Application pending·0 cites
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