Assignee
BAO XUSHENG
SG2 patents
Top patents by PatentIndex Score
US8963326B2Feb 24, 2015
Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migration
BAO XUSHENG13 citations80
US9142522B2Sep 22, 2015
Semiconductor device and method of forming RDL under bump for electrical connection to enclosed bump
BAO XUSHENG1 citations48