Assignee
CABRAL JR CYRIL
US·16 granted patents·2 pending applications·95 citations·filing 2007–2012
Top patents by PatentIndex Score
18 records- 0194US8492897B2Microstructure modification in copper interconnect structuresCABRAL JR CYRIL·Filed 2011·Granted Jul 23, 2013·15 cites·10 claims
- 0294US8089157B2Contact metallurgy structureCABRAL JR CYRIL·Filed 2010·Granted Jan 3, 2012·14 cites·12 claims
- 0393US8431486B2Interconnect structure for improved time dependent dielectric breakdownCABRAL JR CYRIL·Filed 2010·Granted Apr 30, 2013·15 cites·19 claims
- 0490US8129267B2Alpha particle blocking wire structure and method fabricating sameCABRAL JR CYRIL·Filed 2008·Granted Mar 6, 2012·19 cites·30 claims
- 0586US8426236B2Method and structure of photovoltaic grid stacks by solution based processesCABRAL JR CYRIL·Filed 2010·Granted Apr 23, 2013·4 cites·13 claims
- 0686US8101518B2Method and process for forming a self-aligned silicide contactCABRAL JR CYRIL·Filed 2008·Granted Jan 24, 2012·12 cites·27 claims
- 0775US8492899B2Method to electrodeposit nickel on silicon for forming controllable nickel silicideCABRAL JR CYRIL·Filed 2010·Granted Jul 23, 2013·3 cites·20 claims
- 0875US8212218B2Dosimeter powered by passive RF absorptionCABRAL JR CYRIL·Filed 2009·Granted Jul 3, 2012·7 cites·20 claims
- 0970US8648465B2Semiconductor interconnect structure having enhanced performance and reliabilityCABRAL JR CYRIL·Filed 2011·Granted Feb 11, 2014·2 cites·16 claims
- 1067US8772161B2Annealing copper interconnectsCABRAL JR CYRIL·Filed 2011·Granted Jul 8, 2014·2 cites·23 claims
- 1163US8293643B2Method and structure of forming silicide and diffusion barrier layer with direct deposited film on siliconCABRAL JR CYRIL·Filed 2010·Granted Oct 23, 2012·1 cites·11 claims
- 1258US8158449B2Particle emission analysis for semiconductor fabrication stepsCABRAL JR CYRIL·Filed 2008·Granted Apr 17, 2012·1 cites·15 claims
- 1355US8841652B2Self aligned carbide source/drain FETCABRAL JR CYRIL·Filed 2009·Granted Sep 23, 2014·0 cites·10 claims
- 1453US8154130B2Self-aligned metal to form contacts to Ge containing substrates and structure formed therebyCABRAL JR CYRIL·Filed 2008·Granted Apr 10, 2012·0 cites·8 claims
- 1551US8658461B2Self aligned carbide source/drain FETCABRAL JR CYRIL·Filed 2012·Granted Feb 25, 2014·0 cites·9 claims
- 1651US8125082B2Reduction of silicide formation temperature on SiGe containing substratesCABRAL JR CYRIL·Filed 2008·Granted Feb 28, 2012·0 cites·7 claims
- 1738US2009039270A1Large-area alpha-particle detector and method for useCABRAL JR CYRIL·Filed 2007·Application pending·0 cites
- 1837US2012038048A1Stabilized nickel silicide interconnectsCABRAL JR CYRIL·Filed 2010·Application pending·0 cites
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →