Assignee
CAI XIUYU
US·5 granted patents·64 citations·filing 2012–2012
Top patents by PatentIndex Score
5 records- 0196US8551843B1Methods of forming CMOS semiconductor devicesCAI XIUYU·Filed 2012·Granted Oct 8, 2013·34 cites·18 claims
- 0290US8900941B2Methods of forming spacers on FinFETs and other semiconductor devicesCAI XIUYU·Filed 2012·Granted Dec 2, 2014·8 cites·11 claims
- 0390US8691696B2Methods for forming an integrated circuit with straightened recess profileCAI XIUYU·Filed 2012·Granted Apr 8, 2014·11 cites·18 claims
- 0483US9117877B2Methods of forming a dielectric cap layer on a metal gate structureCAI XIUYU·Filed 2012·Granted Aug 25, 2015·6 cites·12 claims
- 0579US8735272B2Integrated circuit having a replacement gate structure and method for fabricating the sameCAI XIUYU·Filed 2012·Granted May 27, 2014·5 cites·19 claims
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