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CAMBRIDGE ELECTRONICS INC
US12 patents
Top patents by PatentIndex Score
US9911817B2Mar 6, 2018
Field-plate structures for semiconductor devices
CAMBRIDGE ELECTRONICS INC24 citations93
US9887268B2Feb 6, 2018
Capacitively-coupled field-plate structures for semiconductor devices
CAMBRIDGE ELECTRONICS INC7 citations83
US9536984B2Jan 3, 2017
Semiconductor structure with a spacer layer
CAMBRIDGE ELECTRONICS INC11 citations82
US9754937B1Sep 5, 2017
Hybrid structure with separate controls
CAMBRIDGE ELECTRONICS INC5 citations72
US9614069B1Apr 4, 2017
III-Nitride semiconductors with recess regions and methods of manufacture
CAMBRIDGE ELECTRONICS INC5 citations72
US10566192B2Feb 18, 2020
Transistor structure having buried island regions
CAMBRIDGE ELECTRONICS INC4 citations71
US9502535B2Nov 22, 2016
Semiconductor structure and etch technique for monolithic integration of III-N transistors
CAMBRIDGE ELECTRONICS INC3 citations71
US9455342B2Sep 27, 2016
Electric field management for a group III-nitride semiconductor device
CAMBRIDGE ELECTRONICS INC4 citations71
US11695052B2Jul 4, 2023
III-Nitride transistor with a cap layer for RF operation
CAMBRIDGE ELECTRONICS INC2 citations62
US12080807B2Sep 3, 2024
III-nitride diode with a modified access region
CAMBRIDGE ELECTRONICS INC0 citations59
US11876130B2Jan 16, 2024
III-nitride transistor with a modified drain access region
CAMBRIDGE ELECTRONICS INC1 citations54
US11349003B2May 31, 2022
Transistor structure with a stress layer
CAMBRIDGE ELECTRONICS INC0 citations52