Assignee
CHANGXIN MEMORY TECH INC
CN·1,748 granted patents·565 pending applications·319 citations·filing 2019–2025
Top patents by PatentIndex Score
2,313 records- 0198US11587949B1Method of manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 21, 2023·6 cites·20 claims
- 0297US12114486B2Semiconductor structure and method for forming the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 8, 2024·4 cites·19 claims
- 0396US12349332B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 1, 2025·2 cites·12 claims
- 0496US12310005B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·2 cites·20 claims
- 0596US12137550B2Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Nov 5, 2024·4 cites·16 claims
- 0696US11527301B2Method for reading and writing and memory deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 13, 2022·8 cites·12 claims
- 0795US12386266B2Method of processing photoresist layer, and photoresist layerCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·2 cites·16 claims
- 0895US12261195B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Mar 25, 2025·2 cites·13 claims
- 0995US12112825B2Sense amplifier, memory, and control methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 8, 2024·6 cites·15 claims
- 1095US11791625B2Electrostatic protection circuitCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 17, 2023·3 cites·9 claims
- 1195US11721974B2Electrostatic discharge (ESD) protection circuit and chipCHANGXIN MEMORY TECH INC·Filed 2021·Granted Aug 8, 2023·3 cites·14 claims
- 1295US11699697B2Electrostatic protection circuitCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 11, 2023·4 cites·16 claims
- 1395US11599417B2Error correction systemCHANGXIN MEMORY TECH INC·Filed 2022·Granted Mar 7, 2023·5 cites·17 claims
- 1495US11581034B1Sense amplification circuit and method of reading out dataCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 14, 2023·6 cites·15 claims
- 1595US11183421B2Interconnection structure of metal lines, method of fabricating the same and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2020·Granted Nov 23, 2021·12 cites·15 claims
- 1695US10938607B2Random access memoryCHANGXIN MEMORY TECH INC·Filed 2020·Granted Mar 2, 2021·5 cites·17 claims
- 1794US12342524B2Method for fabricating semiconductor device and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·2 cites·10 claims
- 1894US12094562B2Sense amplifier, memory, and control methodCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 17, 2024·5 cites·17 claims
- 1994US12051699B2Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 30, 2024·2 cites·19 claims
- 2094US11899057B2Method for identifying latch-up structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 13, 2024·2 cites·9 claims
- 2194US11637189B1Semiconductor structure and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 25, 2023·2 cites·15 claims
- 2294US11508731B1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Nov 22, 2022·3 cites·15 claims
- 2393US11894048B2Control amplifying circuit, sense amplifier and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 6, 2024·3 cites·20 claims
- 2493US11842995B2ESD protection circuit and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 12, 2023·2 cites·16 claims
- 2593US11594264B1Readout circuit layout structure and method of reading dataCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 28, 2023·4 cites·18 claims
- 2693US11475928B2Read operation circuit, semiconductor memory, and read operation methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 18, 2022·3 cites·12 claims
- 2793US11451219B2Delay circuit and delay structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 20, 2022·5 cites·19 claims
- 2893US11378611B1Measurement method for contact resistance of transistor test device and computer-readable mediumCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 5, 2022·2 cites·10 claims
- 2992US12581640B2Semiconductor structure and manufacturing method thereforCHANGXIN MEMORY TECH INC·Filed 2023·Granted Mar 17, 2026·1 cites·18 claims
- 3092US12088091B2Electrostatic discharge protection circuit for chipCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 10, 2024·2 cites·14 claims
- 3192US11862233B2System and method for detecting mismatch of sense amplifierCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jan 2, 2024·5 cites·13 claims
- 3292US11625198B1Detection circuit, detection method and memory deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 11, 2023·4 cites·20 claims
- 3392US11538515B2DRAM memoryCHANGXIN MEMORY TECH INC·Filed 2019·Granted Dec 27, 2022·13 cites·8 claims
- 3491US12563718B2Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2023·Granted Feb 24, 2026·1 cites·17 claims
- 3591US12108591B2Semiconductor structure, method for forming semiconductor structure and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 1, 2024·2 cites·18 claims
- 3691US12082419B2Semiconductor structure and forming method therefor, and memory and forming method thereforCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 3, 2024·2 cites·9 claims
- 3791US12027232B2Word line driver circuit and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 3891US11988704B2Test circuits and semiconductor test methodsCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 21, 2024·2 cites·14 claims
- 3991US11820058B2Injection mould and injection moulding methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 21, 2023·2 cites·13 claims
- 4091US11571717B2Wafer cleaning apparatus and wafer cleaning methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 7, 2023·2 cites·19 claims
- 4190US12396161B2Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 19, 2025·1 cites·13 claims
- 4290US12288759B2Semiconductor redistribution structure with integrated test pad and method for preparing the sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 29, 2025·1 cites·18 claims
- 4390US12114484B2Buried bit line structure, manufacturing method thereof, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 8, 2024·2 cites·20 claims
- 4490US12101927B2Semiconductor structure and method of forming the same, memory and method of forming the sameCHANGXIN MEMORY TECH INC·Filed 2020·Granted Sep 24, 2024·2 cites·11 claims
- 4590US11977465B2Method for testing a command, an apparatus for testing a command and a readable storage mediumCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 7, 2024·2 cites·17 claims
- 4690US11895852B2Method for forming semiconductor structure by using sacrificial layer configured to be replaced subsequently to form bit line, semiconductor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 6, 2024·2 cites·12 claims
- 4790US11854607B2Memory structure and memory layoutCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 26, 2023·3 cites·24 claims
- 4890US11705167B2Memory circuit, method and device for controlling pre-charging of memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 18, 2023·2 cites·16 claims
- 4990US11348972B1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 31, 2022·2 cites·15 claims
- 5089US12426282B2Method of forming capacitor hole, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 23, 2025·1 cites·14 claims
Showing the top 50 of 2,313 patent records by PatentIndex Score.
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