Assignee
CHEN NENG-KUO
TW·8 granted patents·10 pending applications·64 citations·filing 2005–2012
Top patents by PatentIndex Score
18 records- 0196US8319311B2Hybrid STI gap-filling approachCHEN NENG-KUO·Filed 2010·Granted Nov 27, 2012·33 cites·32 claims
- 0288US9245792B2Method for forming interconnect structuresCHEN NENG-KUO·Filed 2008·Granted Jan 26, 2016·14 cites·21 claims
- 0384US9589803B2Gate electrode of field effect transistorCHEN NENG-KUO·Filed 2012·Granted Mar 7, 2017·4 cites·20 claims
- 0479US8187948B2Hybrid gap-fill approach for STI formationCHEN NENG-KUO·Filed 2008·Granted May 29, 2012·7 cites·19 claims
- 0575US8546242B2Hybrid gap-fill approach for STI formationCHEN NENG-KUO·Filed 2012·Granted Oct 1, 2013·3 cites·15 claims
- 0667US9159808B2Selective etch-back process for semiconductor devicesCHEN NENG-KUO·Filed 2009·Granted Oct 13, 2015·2 cites·20 claims
- 0761US8173516B2Method of forming shallow trench isolation structureCHEN NENG-KUO·Filed 2010·Granted May 8, 2012·1 cites·11 claims
- 0858US2009274852A1Method for fabricating high compressive stress film and strained-silicon transistorsCHEN NENG-KUO·Filed 2009·Application pending·0 cites
- 0956US2009280614A1Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistorCHEN NENG-KUO·Filed 2009·Application pending·0 cites
- 1056US2008237748A1Method for fabricating high compressive stress film and strained-silicon transistorsCHEN NENG-KUO·Filed 2008·Application pending·0 cites
- 1152US2008293194A1Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistorCHEN NENG-KUO·Filed 2007·Application pending·0 cites
- 1252US2008096331A1Method for fabricating high compressive stress film and strained-silicon transistorsCHEN NENG-KUO·Filed 2006·Application pending·0 cites
- 1349US8440580B2Method of fabricating silicon nitride gap-filling layerCHEN NENG-KUO·Filed 2007·Granted May 14, 2013·0 cites·17 claims
- 1444US2009127648A1Hybrid Gap-fill Approach for STI FormationCHEN NENG-KUO·Filed 2008·Application pending·0 cites
- 1540US2007105292A1Method for fabricating high tensile stress film and strained-silicon transistorsCHEN NENG-KUO·Filed 2005·Application pending·0 cites
- 1639US2007264786A1Method of manufacturing metal oxide semiconductor transistorCHEN NENG-KUO·Filed 2006·Application pending·0 cites
- 1738US2006249795A1Semiconductor device and fabricating method thereofCHEN NENG-KUO·Filed 2005·Application pending·0 cites
- 1838US2012064720A1Planarization control for semiconductor devicesCHEN NENG-KUO·Filed 2010·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →