Assignee
CHEN XIANGDONG
US·26 granted patents·2 pending applications·241 citations·filing 2006–2012
Top patents by PatentIndex Score
28 records- 0198US8129797B2Work function engineering for eDRAM MOSFETsCHEN XIANGDONG·Filed 2008·Granted Mar 6, 2012·120 cites·12 claims
- 0295US8299545B2Method and structure to improve body effect and junction capacitanceCHEN XIANGDONG·Filed 2010·Granted Oct 30, 2012·30 cites·11 claims
- 0391US9040960B2Heterojunction tunneling field effect transistors, and methods for fabricating the sameCHEN XIANGDONG·Filed 2012·Granted May 26, 2015·9 cites·7 claims
- 0489US8441000B2Heterojunction tunneling field effect transistors, and methods for fabricating the sameCHEN XIANGDONG·Filed 2006·Granted May 14, 2013·12 cites·5 claims
- 0588US8269275B2Method for fabricating a MOS transistor with reduced channel length variation and related structureCHEN XIANGDONG·Filed 2009·Granted Sep 18, 2012·9 cites·17 claims
- 0687US8445969B2High pressure deuterium treatment for semiconductor/high-K insulator interfaceCHEN XIANGDONG·Filed 2011·Granted May 21, 2013·8 cites·24 claims
- 0787US8298897B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2012·Granted Oct 30, 2012·8 cites·9 claims
- 0884US8237197B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2010·Granted Aug 7, 2012·7 cites·20 claims
- 0982US9041153B2MIM capacitor having a local interconnect metal electrode and related structureCHEN XIANGDONG·Filed 2011·Granted May 26, 2015·7 cites·10 claims
- 1080US8748277B2Method for fabricating a MOS transistor with reduced channel length variationCHEN XIANGDONG·Filed 2012·Granted Jun 10, 2014·3 cites·20 claims
- 1178US8062951B2Method to increase effective MOSFET widthCHEN XIANGDONG·Filed 2007·Granted Nov 22, 2011·8 cites·8 claims
- 1273US8791533B2Semiconductor package having an interposer configured for magnetic signalingCHEN XIANGDONG·Filed 2012·Granted Jul 29, 2014·3 cites·20 claims
- 1372US8853746B2CMOS devices with stressed channel regions, and methods for fabricating the sameCHEN XIANGDONG·Filed 2006·Granted Oct 7, 2014·4 cites·10 claims
- 1472US8217470B2Field effect device including recessed and aligned germanium containing channelCHEN XIANGDONG·Filed 2010·Granted Jul 10, 2012·3 cites·19 claims
- 1568US8659081B2Transistor with reduced channel length variationCHEN XIANGDONG·Filed 2012·Granted Feb 25, 2014·1 cites·9 claims
- 1666US8890288B2MOM capacitor having local interconnect metal plates and related methodCHEN XIANGDONG·Filed 2011·Granted Nov 18, 2014·2 cites·10 claims
- 1765US8497564B2Method for fabricating a decoupling composite capacitor in a wafer and related structureCHEN XIANGDONG·Filed 2009·Granted Jul 30, 2013·2 cites·20 claims
- 1863US8163640B2Metal gate compatible electrical fuseCHEN XIANGDONG·Filed 2007·Granted Apr 24, 2012·2 cites·20 claims
- 1962US8089118B2Method for selective gate halo implantation in a semiconductor die and related structureCHEN XIANGDONG·Filed 2009·Granted Jan 3, 2012·1 cites·20 claims
- 2061US9082751B2Half-FinFET semiconductor device and related methodCHEN XIANGDONG·Filed 2011·Granted Jul 14, 2015·1 cites·20 claims
- 2160US8716831B2One time programmable structure using a gate last high-K metal gate processCHEN XIANGDONG·Filed 2011·Granted May 6, 2014·1 cites·18 claims
- 2247US8088663B2SRAM cell having a rectangular combined active area planar pass gate and planar pull-down NFETSCHEN XIANGDONG·Filed 2011·Granted Jan 3, 2012·0 cites·14 claims
- 2345US2012196413A1Method and structure to improve body effect and junction capacitanceCHEN XIANGDONG·Filed 2012·Application pending·0 cites
- 2441US9165834B2Integrated native device without a halo implanted channel region and method for its fabricationCHEN XIANGDONG·Filed 2010·Granted Oct 20, 2015·0 cites·16 claims
- 2541US8610221B2Low mismatch semiconductor device and method for fabricating sameCHEN XIANGDONG·Filed 2010·Granted Dec 17, 2013·0 cites·20 claims
- 2639US9293584B2FinFET devicesCHEN XIANGDONG·Filed 2011·Granted Mar 22, 2016·0 cites·20 claims
- 2739US8106462B2Balancing NFET and PFET performance using straining layersCHEN XIANGDONG·Filed 2010·Granted Jan 31, 2012·0 cites·20 claims
- 2837US2012292708A1Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating SameCHEN XIANGDONG·Filed 2011·Application pending·0 cites
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