Assignee
CHEN YUNG-TIN
US·11 granted patents·3 pending applications·138 citations·filing 2005–2020
Top patents by PatentIndex Score
14 records- 0199US10825834B1Three-dimensional ferroelectric random-access memory (FeRAM)CHEN YUNG TIN·Filed 2020·Granted Nov 3, 2020·17 cites·18 claims
- 0297US8389971B2Memory cells having storage elements that share material layers with steering elements and methods of forming the sameCHEN YUNG-TIN·Filed 2010·Granted Mar 5, 2013·44 cites·51 claims
- 0396US8084682B2Multiple band gapped cadmium telluride photovoltaic devices and process for making the sameCHEN YUNG-TIN·Filed 2009·Granted Dec 27, 2011·29 cites·6 claims
- 0490US8080443B2Method of making pillars using photoresist spacer maskCHEN YUNG-TIN·Filed 2008·Granted Dec 20, 2011·16 cites·29 claims
- 0590US7901975B2Continuous deposition process and apparatus for manufacturing cadmium telluride photovoltaic devicesCHEN YUNG-TIN·Filed 2009·Granted Mar 8, 2011·11 cites·25 claims
- 0688US11515330B2Three-dimensional ferroelectric random-access memory (FeRAM)CHEN YUNG TIN·Filed 2019·Granted Nov 29, 2022·4 cites·22 claims
- 0788US8841648B2Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the sameCHEN YUNG-TIN·Filed 2010·Granted Sep 23, 2014·9 cites·20 claims
- 0885US7960252B2Method for forming a semiconductor film including a film forming gas and decomposing gas while emitting a laser sheetCHEN YUNG-TIN·Filed 2009·Granted Jun 14, 2011·5 cites·20 claims
- 0966US7291562B2Method to form topography in a deposited layer above a substrateCHEN YUNG-TIN·Filed 2005·Granted Nov 6, 2007·2 cites·20 claims
- 1065US8084347B2Resist feature and removable spacer pitch doubling patterning method for pillar structuresCHEN YUNG-TIN·Filed 2008·Granted Dec 27, 2011·1 cites·24 claims
- 1158US11462567B2Three-dimensional ferroelectric random-access memory (FeRAM)CHEN YUNG TIN·Filed 2020·Granted Oct 4, 2022·0 cites·22 claims
- 1258US2010012032A1Apparatus for high-rate chemical vapor depositionCHEN YUNG-TIN·Filed 2008·Application pending·0 cites
- 1344US2012091418A1Bipolar storage elements for use in memory cells and methods of forming the sameCHEN YUNG-TIN·Filed 2010·Application pending·0 cites
- 1441US2013292634A1Resistance-switching memory cells having reduced metal migration and low current operation and methods of forming the sameCHEN YUNG-TIN·Filed 2012·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →