Assignee

CHENG CHENG-HSIEN

TW·1 granted patent·0 citations·filing 2011–2011

Technology mixH01L1 H10B1 H10D1

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1 record

0144US8796754B2Multi level programmable memory structure with multiple charge storage structures and fabricating method thereofCHENG CHENG-HSIEN·Filed 2011·Granted Aug 5, 2014·0 cites·15 claims

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