Assignee
CHU SANFORD
SG·3 granted patents·10 citations·filing 2008–2011
Technology mixH10D3
Top patents by PatentIndex Score
3 records- 0178US8293614B2High performance LDMOS device having enhanced dielectric strain layerCHU SANFORD·Filed 2011·Granted Oct 23, 2012·5 cites·10 claims
- 0271US8334567B2LDMOS using a combination of enhanced dielectric stress layer and dummy gatesCHU SANFORD·Filed 2010·Granted Dec 18, 2012·3 cites·20 claims
- 0360US8163621B2High performance LDMOS device having enhanced dielectric strain layerCHU SANFORD·Filed 2008·Granted Apr 24, 2012·2 cites·8 claims
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