Assignee
CROSSBAR INC
US·196 granted patents·17 pending applications·1,536 citations·filing 2010–2025
Top patents by PatentIndex Score
213 records- 0199US10056907B1Field programmable gate array utilizing two-terminal non-volatile memoryCROSSBAR INC·Filed 2017·Granted Aug 21, 2018·69 cites·20 claims
- 0299US8659003B2Disturb-resistant non-volatile memory device and methodCROSSBAR INC·Filed 2013·Granted Feb 25, 2014·63 cites·3 claims
- 0398US9570683B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2016·Granted Feb 14, 2017·185 cites·20 claims
- 0498US9564587B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2014·Granted Feb 7, 2017·39 cites·30 claims
- 0598US9425237B2Selector device for two-terminal memoryCROSSBAR INC·Filed 2014·Granted Aug 23, 2016·17 cites·20 claims
- 0698US8993397B2Pillar structure for memory device and methodCROSSBAR INC·Filed 2013·Granted Mar 31, 2015·22 cites·18 claims
- 0798US8947908B2Hetero-switching layer in a RRAM device and methodCROSSBAR INC·Filed 2013·Granted Feb 3, 2015·26 cites·20 claims
- 0897US10141034B1Memory apparatus with non-volatile two-terminal memory and expanded, high-speed busCROSSBAR INC·Filed 2015·Granted Nov 27, 2018·25 cites·27 claims
- 0997US9595670B1Resistive random access memory (RRAM) cell and method for forming the RRAM cellCROSSBAR INC·Filed 2014·Granted Mar 14, 2017·25 cites·20 claims
- 1097US9524210B1Separating bits represented by a MLC in connection with ECCCROSSBAR INC·Filed 2015·Granted Dec 20, 2016·25 cites·24 claims
- 1197US9166163B2Sub-oxide interface layer for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Oct 20, 2015·23 cites·29 claims
- 1297US9093635B2Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Jul 28, 2015·24 cites·19 claims
- 1397US8675384B2Circuit for concurrent read operation and method thereforCROSSBAR INC·Filed 2012·Granted Mar 18, 2014·35 cites·28 claims
- 1497US8374018B2Resistive memory using SiGe materialCROSSBAR INC·Filed 2010·Granted Feb 12, 2013·80 cites·23 claims
- 1596US10222989B1Multiple-bank memory device with status feedback for subsets of memory banksCROSSBAR INC·Filed 2015·Granted Mar 5, 2019·26 cites·33 claims
- 1696US9916105B1Page management for data operations utilizing a memory deviceCROSSBAR INC·Filed 2015·Granted Mar 13, 2018·18 cites·20 claims
- 1796US9727258B1Two-terminal memory compatibility with NAND flash memory set features type mechanismsCROSSBAR INC·Filed 2015·Granted Aug 8, 2017·22 cites·29 claims
- 1896US9697874B1Monolithic memory comprising 1T1R code memory and 1TnR storage class memoryCROSSBAR INC·Filed 2016·Granted Jul 4, 2017·24 cites·40 claims
- 1996US9570678B1Resistive RAM with preferental filament formation region and methodsCROSSBAR INC·Filed 2015·Granted Feb 14, 2017·16 cites·26 claims
- 2095US12080347B1Differential programming of two-terminal resistive switching memory with program soaking and adjacent path disablementCROSSBAR INC·Filed 2022·Granted Sep 3, 2024·3 cites·20 claims
- 2195US10248333B1Write distribution techniques for two-terminal memory wear levelingCROSSBAR INC·Filed 2017·Granted Apr 2, 2019·18 cites·20 claims
- 2295US10134469B1Read operation with data latch and signal termination for 1TNR memory arrayCROSSBAR INC·Filed 2017·Granted Nov 20, 2018·16 cites·20 claims
- 2395US10121540B1Selector device for two-terminal memoryCROSSBAR INC·Filed 2017·Granted Nov 6, 2018·7 cites·20 claims
- 2495US9921763B1Multi-bank non-volatile memory apparatus with high-speed busCROSSBAR INC·Filed 2015·Granted Mar 20, 2018·16 cites·20 claims
- 2595US9805794B1Enhanced erasing of two-terminal memoryCROSSBAR INC·Filed 2015·Granted Oct 31, 2017·21 cites·24 claims
- 2695US9685608B2Reduced diffusion in metal electrode for two-terminal memoryCROSSBAR INC·Filed 2014·Granted Jun 20, 2017·12 cites·20 claims
- 2795US9583701B1Methods for fabricating resistive memory device switching material using ion implantationCROSSBAR INC·Filed 2014·Granted Feb 28, 2017·16 cites·20 claims
- 2895US8659933B2Hereto resistive switching material layer in RRAM device and methodCROSSBAR INC·Filed 2013·Granted Feb 25, 2014·24 cites·20 claims
- 2994US12087397B1Dynamic host allocation of physical unclonable feature operation for resistive switching memoryCROSSBAR INC·Filed 2022·Granted Sep 10, 2024·3 cites·20 claims
- 3094US9971545B1Non-volatile write and read cache for storage mediaCROSSBAR INC·Filed 2016·Granted May 15, 2018·13 cites·20 claims
- 3194US9612958B1Wear leveling and improved efficiency for a non-volatile memory deviceCROSSBAR INC·Filed 2015·Granted Apr 4, 2017·18 cites·25 claims
- 3294US9600410B1ReRAM based NAND like architecture with configurable page sizeCROSSBAR INC·Filed 2014·Granted Mar 21, 2017·22 cites·20 claims
- 3394US9112145B1Rectified switching of two-terminal memory via real time filament formationCROSSBAR INC·Filed 2013·Granted Aug 18, 2015·13 cites·17 claims
- 3494US8934280B1Capacitive discharge programming for two-terminal memory cellsCROSSBAR INC·Filed 2013·Granted Jan 13, 2015·43 cites·20 claims
- 3594US8767441B2Switching device having a non-linear elementCROSSBAR INC·Filed 2013·Granted Jul 1, 2014·22 cites·20 claims
- 3693US10453896B14F2 resistive non-volatile memory formed in a NAND architectureCROSSBAR INC·Filed 2017·Granted Oct 22, 2019·12 cites·20 claims
- 3793US9761635B1Selector device for two-terminal memoryCROSSBAR INC·Filed 2016·Granted Sep 12, 2017·10 cites·23 claims
- 3893US9741765B1Monolithically integrated resistive memory using integrated-circuit foundry compatible processesCROSSBAR INC·Filed 2014·Granted Aug 22, 2017·16 cites·20 claims
- 3993US9627443B2Three-dimensional oblique two-terminal memory with enhanced electric fieldCROSSBAR INC·Filed 2014·Granted Apr 18, 2017·13 cites·20 claims
- 4093US9620206B2Memory array architecture with two-terminal memory cellsCROSSBAR INC·Filed 2015·Granted Apr 11, 2017·15 cites·19 claims
- 4193US9520561B1Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2015·Granted Dec 13, 2016·10 cites·20 claims
- 4292US10489700B1Neuromorphic logic for an array of high on/off ratio non-volatile memory cellsCROSSBAR INC·Filed 2015·Granted Nov 26, 2019·14 cites·20 claims
- 4392US9768234B2Resistive memory architecture and devicesCROSSBAR INC·Filed 2015·Granted Sep 19, 2017·12 cites·20 claims
- 4492US9685483B2Selector-based non-volatile cell fabrication utilizing IC-foundry compatible processCROSSBAR INC·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 4591US12198760B2Differential programming of two-terminal memory with intrinsic error suppression and wordline couplingCROSSBAR INC·Filed 2022·Granted Jan 14, 2025·2 cites·20 claims
- 4691US11967376B2Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chipCROSSBAR INC·Filed 2022·Granted Apr 23, 2024·1 cites·19 claims
- 4791US11823739B2Physically unclonable function (PUF) generation involving high side programming of bitsCROSSBAR INC·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 4891US10134984B1Two-terminal memory electrode comprising a non-continuous contact surfaceCROSSBAR INC·Filed 2014·Granted Nov 20, 2018·10 cites·20 claims
- 4991US9735358B2Noble metal / non-noble metal electrode for RRAM applicationsCROSSBAR INC·Filed 2016·Granted Aug 15, 2017·6 cites·26 claims
- 5091US9659646B1Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cellsCROSSBAR INC·Filed 2016·Granted May 23, 2017·10 cites·30 claims
Showing the top 50 of 213 patent records by PatentIndex Score.
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