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DAS MRINAL K
US4 patents
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US8859366B2Oct 14, 2014
Methods of fabricating silicon carbide devices having smooth channels
DAS MRINAL K1 citations60
US8188483B2May 29, 2012
Silicon carbide devices having smooth channels
DAS MRINAL K1 citations60
US8536066B2Sep 17, 2013
Methods of forming SiC MOSFETs with high inversion layer mobility
DAS MRINAL K1 citations47
US8119539B2Feb 21, 2012
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
DAS MRINAL K0 citations47