Assignee
DAS MRINAL KANTI
US·2 granted patents·7 citations·filing 2007–2011
Top patents by PatentIndex Score
2 records- 0176US8866150B2Silicon carbide power devices including P-type epitaxial layers and direct ohmic contactsDAS MRINAL KANTI·Filed 2007·Granted Oct 21, 2014·6 cites·14 claims
- 0263US9552997B2Silicon carbide switching devices including P-type channelsDAS MRINAL KANTI·Filed 2011·Granted Jan 24, 2017·1 cites·11 claims
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