Assignee
DO JIN-HO
KR·2 granted patents·3 citations·filing 2011–2012
Top patents by PatentIndex Score
2 records- 0167US8815673B2Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknessesDO JIN-HO·Filed 2012·Granted Aug 26, 2014·3 cites·13 claims
- 0246US8673747B2Method of fabricating semiconductor deviceDO JIN-HO·Filed 2011·Granted Mar 18, 2014·0 cites·4 claims
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