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DONG YAOQI
KR
2 patents
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US9576959B1
Feb 21, 2017
Semiconductor device having first and second gate electrodes and method of manufacturing the same
DONG YAOQI
11 citations
79
US8575673B2
Nov 5, 2013
Electrically erasable programmable memory and its manufacturing method
DONG YAOQI
0 citations
30