Assignee

DOVE CURTIS

US·1 granted patent·1 pending application·5 citations·filing 2009–2010

Technology mixH10F2 Y02E2 H10D1 H10P1

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2 records

0172US8329046B2Methods for damage etch and texturing of silicon single crystal substratesDOVE CURTIS·Filed 2009·Granted Dec 11, 2012·5 cites·9 claims
0242US2011180132A1Texturing and damage etch of silicon single crystal (100) substratesDOVE CURTIS·Filed 2010·Application pending·0 cites

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