Assignee
FASL LLC
US28 patents
Top patents by PatentIndex Score
US6912163B2Jun 28, 2005
Memory device having high work function gate and method of erasing same
FASL LLC168 citations99
US7033957B1Apr 25, 2006
ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices
FASL LLC62 citations96
US6803275B1Oct 12, 2004
ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
FASL LLC46 citations96
US6949433B1Sep 27, 2005
Method of formation of semiconductor resistant to hot carrier injection stress
FASL LLC103 citations95
US7067377B1Jun 27, 2006
Recessed channel with separated ONO memory device
FASL LLC30 citations93
US6955965B1Oct 18, 2005
Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device
FASL LLC26 citations93
US6969886B1Nov 29, 2005
ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
FASL LLC28 citations92
US6958511B1Oct 25, 2005
Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen
FASL LLC52 citations92
US6949481B1Sep 27, 2005
Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
FASL LLC50 citations92
US6884681B1Apr 26, 2005
Method of manufacturing a semiconductor memory with deuterated materials
FASL LLC31 citations92
US6791880B1Sep 14, 2004
Non-volatile memory read circuit with end of life simulation
FASL LLC44 citations92
US6707078B1Mar 16, 2004
Dummy wordline for erase and bitline leakage
FASL LLC39 citations92
US7009887B1Mar 7, 2006
Method of determining voltage compensation for flash memory devices
FASL LLC23 citations91
US6944057B1Sep 13, 2005
Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage reference
FASL LLC16 citations84
US6809033B1Oct 26, 2004
Innovative method of hard mask removal
FASL LLC15 citations84
US6803265B1Oct 12, 2004
Liner for semiconductor memories and manufacturing method therefor
FASL LLC15 citations84
US7019366B1Mar 28, 2006
Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistance
FASL LLC8 citations74
US6813735B1Nov 2, 2004
I/O based column redundancy for virtual ground with 2-bit cell flash memory
FASL LLC9 citations74
US6977195B1Dec 20, 2005
Test structure for characterizing junction leakage current
FASL LLC8 citations72
US7394125B1Jul 1, 2008
Recessed channel with separated ONO memory device
FASL LLC3 citations63
US7074677B1Jul 11, 2006
Memory with improved charge-trapping dielectric layer
FASL LLC3 citations63
US6730564B1May 4, 2004
Salicided gate for virtual ground arrays
FASL LLC3 citations63
US7098546B1Aug 29, 2006
Alignment marks with salicided spacers between bitlines for alignment signal improvement
FASL LLC2 citations62
US6979577B2Dec 27, 2005
Method and apparatus for manufacturing semiconductor device
FASL LLC2 citations58
US6873022B2Mar 29, 2005
Semiconductor device and method for manufacturing the same
FASL LLC0 citations52
US6859393B1Feb 22, 2005
Ground structure for page read and page write for flash memory
FASL LLC1 citations52
US7037780B2May 2, 2006
Semiconductor memory device and method of fabricating the same
FASL LLC0 citations44
US6984563B1Jan 10, 2006
Floating gate semiconductor component and method of manufacture
FASL LLC1 citations43