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FEUDEL THOMAS
DE
2 patents
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US8183605B2
May 22, 2012
Reducing transistor junction capacitance by recessing drain and source regions
FEUDEL THOMAS
0 citations
46
US8288256B2
Oct 16, 2012
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process
FEUDEL THOMAS
0 citations
36