Assignee
FLACHOWSKY STEFAN
DE·28 granted patents·11 pending applications·119 citations·filing 2010–2013
Top patents by PatentIndex Score
39 records- 0195US9224840B2Replacement gate FinFET structures with high mobility channelFLACHOWSKY STEFAN·Filed 2012·Granted Dec 29, 2015·27 cites·12 claims
- 0292US8574981B2Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising sameFLACHOWSKY STEFAN·Filed 2011·Granted Nov 5, 2013·13 cites·18 claims
- 0391US8598007B1Methods of performing highly tilted halo implantation processes on semiconductor devicesFLACHOWSKY STEFAN·Filed 2012·Granted Dec 3, 2013·11 cites·23 claims
- 0489US8524563B2Semiconductor device with strain-inducing regions and method thereofFLACHOWSKY STEFAN·Filed 2012·Granted Sep 3, 2013·8 cites·12 claims
- 0587US9012277B2In situ doping and diffusionless annealing of embedded stressor regions in PMOS and NMOS devicesFLACHOWSKY STEFAN·Filed 2012·Granted Apr 21, 2015·8 cites·27 claims
- 0686US8809151B2Transistor comprising an embedded sigma shaped sequentially formed semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 19, 2014·8 cites·17 claims
- 0786US8471342B1Integrated circuits formed on strained substrates and including relaxed buffer layers and methods for the manufacture thereofFLACHOWSKY STEFAN·Filed 2011·Granted Jun 25, 2013·8 cites·20 claims
- 0884US8524566B2Methods for the fabrication of integrated circuits including back-etching of raised conductive structuresFLACHOWSKY STEFAN·Filed 2011·Granted Sep 3, 2013·7 cites·20 claims
- 0984US8501601B2Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 6, 2013·6 cites·15 claims
- 1083US8536034B2Methods of forming stressed silicon-carbon areas in an NMOS transistorFLACHOWSKY STEFAN·Filed 2011·Granted Sep 17, 2013·5 cites·20 claims
- 1179US8698243B2Semiconductor device with strain-inducing regions and method thereofFLACHOWSKY STEFAN·Filed 2013·Granted Apr 15, 2014·3 cites·6 claims
- 1271US8753969B2Methods for fabricating MOS devices with stress memorizationFLACHOWSKY STEFAN·Filed 2012·Granted Jun 17, 2014·3 cites·7 claims
- 1369US9093554B2Methods of forming semiconductor devices with embedded semiconductor material as source/drain regions using a reduced number of spacersFLACHOWSKY STEFAN·Filed 2012·Granted Jul 28, 2015·2 cites·21 claims
- 1469US8679921B2Canyon gate transistor and methods for its fabricationFLACHOWSKY STEFAN·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1567US8822298B2Performance enhancement in transistors by reducing the recessing of active regions and removing spacersFLACHOWSKY STEFAN·Filed 2012·Granted Sep 2, 2014·2 cites·17 claims
- 1666US8872272B2Stress enhanced CMOS circuits and methods for their manufactureFLACHOWSKY STEFAN·Filed 2012·Granted Oct 28, 2014·2 cites·12 claims
- 1765US8563374B2Strained semiconductor devices having asymmetrical heterojunction structures and methods for the fabrication thereofFLACHOWSKY STEFAN·Filed 2011·Granted Oct 22, 2013·1 cites·19 claims
- 1862US8586440B2Methods for fabricating integrated circuits using non-oxidizing resist removalFLACHOWSKY STEFAN·Filed 2011·Granted Nov 19, 2013·1 cites·18 claims
- 1961US8642430B2Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafersFLACHOWSKY STEFAN·Filed 2012·Granted Feb 4, 2014·1 cites·18 claims
- 2060US8329551B2Semiconductor device substrate with embedded stress region, and related fabrication methodsFLACHOWSKY STEFAN·Filed 2010·Granted Dec 11, 2012·1 cites·20 claims
- 2150US8324041B2Complementary stress liner to improve DGO/AVT devices and poly and diffusion resistorsFLACHOWSKY STEFAN·Filed 2011·Granted Dec 4, 2012·0 cites·14 claims
- 2246US8415221B2Semiconductor devices having encapsulated stressor regions and related fabrication methodsFLACHOWSKY STEFAN·Filed 2011·Granted Apr 9, 2013·0 cites·13 claims
- 2345US8962429B2Integrated circuits with improved spacers and methods for fabricating sameFLACHOWSKY STEFAN·Filed 2012·Granted Feb 24, 2015·0 cites·20 claims
- 2444US8647951B2Implantation of hydrogen to improve gate insulation layer-substrate interfaceFLACHOWSKY STEFAN·Filed 2011·Granted Feb 11, 2014·0 cites·15 claims
- 2543US9490344B2Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation processFLACHOWSKY STEFAN·Filed 2012·Granted Nov 8, 2016·0 cites·16 claims
- 2642US8859408B2Stabilized metal silicides in silicon-germanium regions of transistor elementsFLACHOWSKY STEFAN·Filed 2011·Granted Oct 14, 2014·0 cites·17 claims
- 2742US8476131B2Methods of forming a semiconductor device with recessed source/design regions, and a semiconductor device comprising sameFLACHOWSKY STEFAN·Filed 2011·Granted Jul 2, 2013·0 cites·15 claims
- 2840US2013065373A1Methods and Systems for Forming Implanted Doped Regions for a Semiconductor Device Using Reduced Temperature Ion ImplantationFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 2940US2013244437A1Methods of forming features on an integrated circuit product using a novel compound sidewall image transfer techniqueFLACHOWSKY STEFAN·Filed 2012·Application pending·0 cites
- 3040US2013175610A1Transistor with stress enhanced channel and methods for fabricationFLACHOWSKY STEFAN·Filed 2012·Application pending·0 cites
- 3139US2014030876A1Methods for fabricating high carrier mobility finfet structuresFLACHOWSKY STEFAN·Filed 2012·Application pending·0 cites
- 3239US2012241816A1Stabilization of Metal Silicides in PFET Transistors by Incorporation of Stabilizing Species in a Si/Ge Semiconductor MaterialFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3339US2012161203A1Strain Enhancement in Transistors Comprising an Embedded Strain-Inducing Semiconductor Material by Alloy Species CondensationFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3438US8642420B2Fabrication of a semiconductor device with extended epitaxial semiconductor regionsFLACHOWSKY STEFAN·Filed 2011·Granted Feb 4, 2014·0 cites·19 claims
- 3538US2012309182A1Method of Forming Sidewall Spacers Having Different Widths Using a Non-Conformal Deposition ProcessFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3638US2013065367A1Methods of Forming Highly Scaled Semiconductor Devices Using a Reduced Number of SpacersFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3737US2012196422A1Stress Memorization Technique Using Gate EncapsulationFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3837US2013095627A1Methods of Forming Source/Drain Regions on Transistor DevicesFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
- 3936US2012231591A1Methods for fabricating cmos integrated circuits having metal silicide contactsFLACHOWSKY STEFAN·Filed 2011·Application pending·0 cites
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