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FLASHSILICON INC
US34 patents
Top patents by PatentIndex Score
US7729165B2Jun 1, 2010
Self-adaptive and self-calibrated multiple-level non-volatile memories
FLASHSILICON INC27 citations93
US10431308B1Oct 1, 2019
Memory cell size reduction for scalable logic gate non-volatile memory arrays
FLASHSILICON INC8 citations84
US9754668B1Sep 5, 2017
Digital perceptron
FLASHSILICON INC8 citations84
US9502113B2Nov 22, 2016
Configurable non-volatile content addressable memory
FLASHSILICON INC5 citations84
US8716803B2May 6, 2014
3-D single floating gate non-volatile memory device
FLASHSILICON INC14 citations84
US7859903B1Dec 28, 2010
Methods and structures for reading out non-volatile memory using NVM cells as a load element
FLASHSILICON INC9 citations84
US7733700B2Jun 8, 2010
Method and structures for highly efficient hot carrier injection programming for non-volatile memories
FLASHSILICON INC13 citations84
US7515465B1Apr 7, 2009
Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM)
FLASHSILICON INC10 citations84
US7400527B2Jul 15, 2008
Bit symbol recognition method and structure for multiple bit storage in non-volatile memories
FLASHSILICON INC10 citations84
US10147492B1Dec 4, 2018
MOSFET threshold voltage sensing scheme for non-volatile memory
FLASHSILICON INC6 citations73
US9082490B2Jul 14, 2015
Ultra-low power programming method for N-channel semiconductor non-volatile memory
FLASHSILICON INC5 citations73
US8988104B2Mar 24, 2015
Multiple-time configurable non-volatile look-up-table
FLASHSILICON INC4 citations73
US12573451B2Mar 10, 2026
Four-transistor static random access memory cell with enhanced data retention
FLASHSILICON INC0 citations63
US11825652B2Nov 21, 2023
Methods of erasing semiconductor non-volatile memories
FLASHSILICON INC0 citations63
US11201162B2Dec 14, 2021
Methods of erasing semiconductor non-volatile memories
FLASHSILICON INC0 citations63
US8879323B2Nov 4, 2014
Interconnection matrix using semiconductor non-volatile memory
FLASHSILICON INC2 citations63
US7995398B2Aug 9, 2011
Structures and methods for reading out non-volatile memories
FLASHSILICON INC3 citations63
US7660154B2Feb 9, 2010
Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)
FLASHSILICON INC2 citations63
US7626868B1Dec 1, 2009
Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)
FLASHSILICON INC4 citations63
US7606069B2Oct 20, 2009
Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memories
FLASHSILICON INC4 citations63
US12020143B2Jun 25, 2024
Digital neuromorphic code processor
FLASHSILICON INC0 citations52
US11662980B2May 30, 2023
In-memory arithmetic processors
FLASHSILICON INC0 citations52
US11600320B2Mar 7, 2023
Perpectual digital perceptron
FLASHSILICON INC0 citations52
US11461074B2Oct 4, 2022
Multiple-digit binary in-memory multiplier devices
FLASHSILICON INC0 citations52
US11200029B2Dec 14, 2021
Extendable multiple-digit base-2n in-memory adder device
FLASHSILICON INC0 citations52
US11031079B1Jun 8, 2021
Dynamic digital perceptron
FLASHSILICON INC0 citations52
US10148254B2Dec 4, 2018
Standby current reduction in digital circuitries
FLASHSILICON INC0 citations52
US9595330B2Mar 14, 2017
Configurable non-volatile content addressable memory
FLASHSILICON INC1 citations52
US9117518B2Aug 25, 2015
Non-volatile register and non-volatile shift register
FLASHSILICON INC0 citations52
US8809147B2Aug 19, 2014
Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same
FLASHSILICON INC0 citations52
US8716138B2May 6, 2014
Method for fabricating a field side sub-bitline nor flash array
FLASHSILICON INC1 citations52
US8031524B2Oct 4, 2011
Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)
FLASHSILICON INC0 citations52
US7983087B2Jul 19, 2011
Methods and structures for reading out non-volatile memory using NVM cells as a load element
FLASHSILICON INC1 citations52
US10068772B2Sep 4, 2018
Recess channel semiconductor non-volatile memory device and fabricating the same
FLASHSILICON INC0 citations42