Assignee
FUJIAN JING AN OPTOELECTRONICS CO LTD
CN·2 granted patents·2 pending applications·1 citations·filing 2019–2023
Top patents by PatentIndex Score
4 records- 0173US11978627B2Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor deviceFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2021·Granted May 7, 2024·1 cites·18 claims
- 0247US12012669B2Method of processing a lithium tantalate and/or lithium niobate wafer by subjecting the wafer to heat and a reducing agentFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2020·Granted Jun 18, 2024·0 cites·15 claims
- 0345US2023411152A1Substrate For Epitaxial Growth, Manufacturing Method of the Same, Semiconductor Device Including the Same and Manufacturing Method Using the SameFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0430US2019264349A1Method for manufacturing crystal ingotFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
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