Assignee
FUJII TETSUO
JP·13 granted patents·59 citations·filing 2008–2014
Top patents by PatentIndex Score
13 records- 0195US8283738B2Semiconductor device including sensor member and cap member and method of making the sameFUJII TETSUO·Filed 2010·Granted Oct 9, 2012·18 cites·16 claims
- 0290US8759926B2Semiconductor physical quantity sensorFUJII TETSUO·Filed 2011·Granted Jun 24, 2014·11 cites·3 claims
- 0386US8455973B2Region divided substrate and semiconductor deviceFUJII TETSUO·Filed 2010·Granted Jun 4, 2013·7 cites·29 claims
- 0482US8413507B2Semiconductor dynamic quantity sensor and method of manufacturing the sameFUJII TETSUO·Filed 2010·Granted Apr 9, 2013·7 cites·13 claims
- 0580US8829627B2Dynamic quantity sensor device and manufacturing method of the sameFUJII TETSUO·Filed 2012·Granted Sep 9, 2014·3 cites·20 claims
- 0676US10446714B2Highly efficient gallium nitride based light emitting diodes via surface rougheningFUJII TETSUO·Filed 2014·Granted Oct 15, 2019·2 cites·12 claims
- 0772US8749019B2Region-divided substrate, semiconductor device having region-divided substrate, and method for manufacturing the sameFUJII TETSUO·Filed 2012·Granted Jun 10, 2014·3 cites·21 claims
- 0870US8604565B2Physical quantity detection device and method for manufacturing the sameFUJII TETSUO·Filed 2011·Granted Dec 10, 2013·4 cites·30 claims
- 0967US8089144B2Semiconductor device and method for manufacturing the sameFUJII TETSUO·Filed 2009·Granted Jan 3, 2012·3 cites·22 claims
- 1062US8169082B2Semiconductor device and method for manufacturing the sameFUJII TETSUO·Filed 2011·Granted May 1, 2012·1 cites·4 claims
- 1156US8766296B2Highly efficient gallium nitride based light emitting diodes via surface rougheningFUJII TETSUO·Filed 2009·Granted Jul 1, 2014·0 cites·33 claims
- 1255US8519493B2Semiconductor device having multiple substratesFUJII TETSUO·Filed 2008·Granted Aug 27, 2013·0 cites·10 claims
- 1349US8264051B2Semiconductor device and manufacturing method of the sameFUJII TETSUO·Filed 2011·Granted Sep 11, 2012·0 cites·8 claims
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