Assignee
FUJITO KENJI
JP·4 granted patents·1 pending application·9 citations·filing 2005–2012
Top patents by PatentIndex Score
5 records- 0182US8269251B2Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting deviceFUJITO KENJI·Filed 2008·Granted Sep 18, 2012·7 cites·13 claims
- 0270US8728622B2Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystalFUJITO KENJI·Filed 2012·Granted May 20, 2014·2 cites·19 claims
- 0355US8709371B2Method for growing group III-nitride crystals in supercritical ammonia using an autoclaveFUJITO KENJI·Filed 2005·Granted Apr 29, 2014·0 cites·15 claims
- 0449US2012305983A1Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting deviceFUJITO KENJI·Filed 2012·Application pending·0 cites
- 0541US8545626B2Nitride semiconductor crystal and its production methodFUJITO KENJI·Filed 2009·Granted Oct 1, 2013·0 cites·19 claims
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