Assignee
FUKUTOME HIDENOBU
JP·4 granted patents·2 citations·filing 2007–2010
Top patents by PatentIndex Score
4 records- 0170US9093529B2Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor deviceFUKUTOME HIDENOBU·Filed 2007·Granted Jul 28, 2015·2 cites·19 claims
- 0252US8546247B2Manufacturing method of semiconductor device with amorphous silicon layer formationFUKUTOME HIDENOBU·Filed 2009·Granted Oct 1, 2013·0 cites·9 claims
- 0351US9786565B2Semiconductor device and method of manufacturing the semiconductor deviceFUKUTOME HIDENOBU·Filed 2009·Granted Oct 10, 2017·0 cites·10 claims
- 0437US8399345B2Semiconductor device having nickel silicide layerFUKUTOME HIDENOBU·Filed 2010·Granted Mar 19, 2013·0 cites·10 claims
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