Assignee
FUKUYAMA HIROYUKI
JP·4 granted patents·1 pending application·4 citations·filing 2006–2011
Top patents by PatentIndex Score
5 records- 0173US8137825B2Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereofFUKUYAMA HIROYUKI·Filed 2006·Granted Mar 20, 2012·2 cites·9 claims
- 0267US8397132B2Memory deviceFUKUYAMA HIROYUKI·Filed 2010·Granted Mar 12, 2013·2 cites·14 claims
- 0343US2012240845A1Production method of an aluminum nitride single crystalFUKUYAMA HIROYUKI·Filed 2010·Application pending·0 cites
- 0442US8735905B2Method for producing aluminum nitride crystalsFUKUYAMA HIROYUKI·Filed 2011·Granted May 27, 2014·0 cites·8 claims
- 0535US8199548B2Semiconductor storage deviceFUKUYAMA HIROYUKI·Filed 2010·Granted Jun 12, 2012·0 cites·20 claims
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