Assignee
FUKUZUMI YOSHIAKI
JP·17 granted patents·4 pending applications·277 citations·filing 2005–2012
Top patents by PatentIndex Score
21 records- 0198US8476708B2Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentrationFUKUZUMI YOSHIAKI·Filed 2012·Granted Jul 2, 2013·59 cites·15 claims
- 0297US8653582B2Nonvolatile semiconductor memory device and method for manufacturing sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Feb 18, 2014·26 cites·15 claims
- 0396US8247863B2Nonvolatile semiconductor memory device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Aug 21, 2012·28 cites·20 claims
- 0496US8199573B2Nonvolatile semiconductor memory deviceFUKUZUMI YOSHIAKI·Filed 2010·Granted Jun 12, 2012·35 cites·20 claims
- 0594US8335111B2Non-volatile semiconductor storage device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Dec 18, 2012·21 cites·20 claims
- 0694US8237211B2Non-volatile semiconductor storage device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2009·Granted Aug 7, 2012·24 cites·13 claims
- 0793US8957471B2Semiconductor memory device and method for manufacturing sameFUKUZUMI YOSHIAKI·Filed 2011·Granted Feb 17, 2015·18 cites·11 claims
- 0892US8217446B2Nonvolatile semiconductor memory device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2009·Granted Jul 10, 2012·24 cites·11 claims
- 0991US8692312B2Semiconductor memory device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2012·Granted Apr 8, 2014·13 cites·8 claims
- 1088US8334561B2Nonvolatile semiconductor memory device and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2010·Granted Dec 18, 2012·11 cites·12 claims
- 1181US8582341B2Semiconductor device and method for manufacturing sameFUKUZUMI YOSHIAKI·Filed 2012·Granted Nov 12, 2013·6 cites·20 claims
- 1273US8629492B2Shift register memoryFUKUZUMI YOSHIAKI·Filed 2012·Granted Jan 14, 2014·3 cites·20 claims
- 1371US8743584B2Shift register memory and driving method thereofFUKUZUMI YOSHIAKI·Filed 2012·Granted Jun 3, 2014·3 cites·20 claims
- 1470US8653577B2Nonvolatile semiconductor memory deviceFUKUZUMI YOSHIAKI·Filed 2009·Granted Feb 18, 2014·4 cites·4 claims
- 1565US8437167B2Shift register memory device, shift register, and data storage methodFUKUZUMI YOSHIAKI·Filed 2011·Granted May 7, 2013·2 cites·23 claims
- 1654US2007007569A1Semiconductor memory device comprising magneto resistive element and its manufacturing methodFUKUZUMI YOSHIAKI·Filed 2006·Application pending·0 cites
- 1752US2008241598A1Magnetic random access memory having magnetoresistive element with nonmagnetic metal layerFUKUZUMI YOSHIAKI·Filed 2008·Application pending·0 cites
- 1851US8581305B2Semiconductor memory deviceFUKUZUMI YOSHIAKI·Filed 2011·Granted Nov 12, 2013·0 cites·11 claims
- 1948US2006131629A1Magnetic random access memory having magnetoresistive element with nonmagnetic metal layerFUKUZUMI YOSHIAKI·Filed 2005·Application pending·0 cites
- 2042US9064975B2Shift register memory and method of manufacturing the sameFUKUZUMI YOSHIAKI·Filed 2012·Granted Jun 23, 2015·0 cites·17 claims
- 2135US2007211522A1Magnetic random access memoryFUKUZUMI YOSHIAKI·Filed 2006·Application pending·0 cites
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