Assignee

GAMBIN VINCENT

US·2 granted patents·21 citations·filing 2011–2012

Technology mixH10D2 H10W1

Top patents by PatentIndex Score

2 records

0189US8575657B2Direct growth of diamond in backside vias for GaN HEMT devicesGAMBIN VINCENT·Filed 2012·Granted Nov 5, 2013·18 cites·20 claims
0268US8710511B2AIN buffer N-polar GaN HEMT profileGAMBIN VINCENT·Filed 2011·Granted Apr 29, 2014·3 cites·20 claims

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