Assignee
GEN SEMICONDUCTOR INC
US·95 granted patents·2,648 citations·filing 1994–2007
Top patents by PatentIndex Score
95 records- 0198US6621107B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·179 cites·26 claims
- 0296US6686244B2Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation stepGEN SEMICONDUCTOR INC·Filed 2002·Granted Feb 3, 2004·94 cites·25 claims
- 0396US6593620B1Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 15, 2003·123 cites·25 claims
- 0496US6479352B2Method of fabricating high voltage power MOSFET having low on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 12, 2002·126 cites·13 claims
- 0596US6475884B2Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 5, 2002·86 cites·11 claims
- 0696US6472708B1Trench MOSFET with structure having low gate chargeGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·98 cites·9 claims
- 0796US6472678B1Trench MOSFET with double-diffused body profileGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·102 cites·13 claims
- 0895US6657254B2Trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·86 cites·14 claims
- 0995US6576516B1High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysiliconGEN SEMICONDUCTOR INC·Filed 2001·Granted Jun 10, 2003·70 cites·38 claims
- 1095US6465304B1Method for fabricating a power semiconductor device having a floating island voltage sustaining layerGEN SEMICONDUCTOR INC·Filed 2001·Granted Oct 15, 2002·105 cites·25 claims
- 1194US6566201B1Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusionGEN SEMICONDUCTOR INC·Filed 2001·Granted May 20, 2003·71 cites·17 claims
- 1292US7586148B2Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenchesGEN SEMICONDUCTOR INC·Filed 2006·Granted Sep 8, 2009·19 cites·11 claims
- 1392US6762098B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2003·Granted Jul 13, 2004·59 cites·6 claims
- 1492US6376315B1Method of forming a trench DMOS having reduced threshold voltageGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 23, 2002·67 cites·24 claims
- 1591US6674124B2Trench MOSFET having low gate chargeGEN SEMICONDUCTOR INC·Filed 2001·Granted Jan 6, 2004·49 cites·16 claims
- 1690US6518127B2Trench DMOS transistor having a double gate structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Feb 11, 2003·48 cites·2 claims
- 1789US6689662B2Method of forming a high voltage power MOSFET having low on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Feb 10, 2004·31 cites·13 claims
- 1889US6548860B1DMOS transistor structure having improved performanceGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 15, 2003·47 cites·22 claims
- 1988US6724044B2MOSFET device having geometry that permits frequent body contactGEN SEMICONDUCTOR INC·Filed 2002·Granted Apr 20, 2004·41 cites·27 claims
- 2088US6489660B1Low-voltage punch-through bi-directional transient-voltage suppression devicesGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 3, 2002·59 cites·9 claims
- 2188US6312993B1High speed trench DMOSGEN SEMICONDUCTOR INC·Filed 2000·Granted Nov 6, 2001·34 cites·36 claims
- 2287US6777745B2Symmetric trench MOSFET device and method of making sameGEN SEMICONDUCTOR INC·Filed 2001·Granted Aug 17, 2004·36 cites·18 claims
- 2387US6624494B2Method for fabricating a power semiconductor device having a floating island voltage sustaining layerGEN SEMICONDUCTOR INC·Filed 2002·Granted Sep 23, 2003·38 cites·15 claims
- 2486US6949432B2Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surfaceGEN SEMICONDUCTOR INC·Filed 2004·Granted Sep 27, 2005·33 cites·18 claims
- 2586US6710400B2Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusionGEN SEMICONDUCTOR INC·Filed 2003·Granted Mar 23, 2004·31 cites·11 claims
- 2686US6627949B2High voltage power MOSFET having low on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 30, 2003·27 cites·4 claims
- 2785US6979621B2Trench MOSFET having low gate chargeGEN SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·32 cites·4 claims
- 2885US6822288B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 23, 2004·32 cites·16 claims
- 2985US6445037B1Trench DMOS transistor having lightly doped source structureGEN SEMICONDUCTOR INC·Filed 2000·Granted Sep 3, 2002·37 cites·28 claims
- 3084US6707127B1Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Mar 16, 2004·30 cites·9 claims
- 3184US6283693B1Method and apparatus for semiconductor chip handlingGEN SEMICONDUCTOR INC·Filed 1999·Granted Sep 4, 2001·96 cites·17 claims
- 3282US6472709B1Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surfaceGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·27 cites·15 claims
- 3381US6656797B2High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantationGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·25 cites·14 claims
- 3480US7224027B2High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysiliconGEN SEMICONDUCTOR INC·Filed 2004·Granted May 29, 2007·18 cites·20 claims
- 3580US6849899B2High speed trench DMOSGEN SEMICONDUCTOR INC·Filed 2003·Granted Feb 1, 2005·20 cites·3 claims
- 3679US6750104B2High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping sourceGEN SEMICONDUCTOR INC·Filed 2001·Granted Jun 15, 2004·19 cites·17 claims
- 3779US6545315B2Trench DMOS transistor having reduced punch-throughGEN SEMICONDUCTOR INC·Filed 2001·Granted Apr 8, 2003·22 cites·18 claims
- 3878US7242078B2Surface mount multichip devicesGEN SEMICONDUCTOR INC·Filed 2005·Granted Jul 10, 2007·9 cites·5 claims
- 3978US6649477B2Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islandsGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 18, 2003·19 cites·24 claims
- 4077US6620691B2Semiconductor trench device with enhanced gate oxide integrity structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·22 cites·14 claims
- 4176US7019360B2High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping sourceGEN SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·15 cites·12 claims
- 4275US6794251B2Method of making a power semiconductor deviceGEN SEMICONDUCTOR INC·Filed 2003·Granted Sep 21, 2004·12 cites·6 claims
- 4375US6657255B2Trench DMOS device with improved drain contactGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·19 cites·16 claims
- 4474US6580141B2Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2001·Granted Jun 17, 2003·16 cites·9 claims
- 4574US5882986ASemiconductor chips having a mesa structure provided by sawingGEN SEMICONDUCTOR INC·Filed 1998·Granted Mar 16, 1999·48 cites·9 claims
- 4673US7525183B2Surface mount multichip devicesGEN SEMICONDUCTOR INC·Filed 2007·Granted Apr 28, 2009·6 cites·2 claims
- 4773US6593619B1High voltage power MOSFET having low on-resistanceGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 15, 2003·11 cites·2 claims
- 4872US7084455B2Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layerGEN SEMICONDUCTOR INC·Filed 2004·Granted Aug 1, 2006·12 cites·6 claims
- 4972US6740951B2Two-mask trench schottky diodeGEN SEMICONDUCTOR INC·Filed 2001·Granted May 25, 2004·17 cites·26 claims
- 5071US6919625B2Surface mount multichip devicesGEN SEMICONDUCTOR INC·Filed 2003·Granted Jul 19, 2005·18 cites·16 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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