Assignee
GLOBALFOUNDARIES INC
US7 patents
Top patents by PatentIndex Score
US9368608B1Jun 14, 2016
Heterojunction bipolar transistor with improved performance and breakdown voltage
GLOBALFOUNDARIES INC26 citations93
US9064948B2Jun 23, 2015
Methods of forming a semiconductor device with low-k spacers and the resulting device
GLOBALFOUNDARIES INC11 citations84
US8940633B2Jan 27, 2015
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
GLOBALFOUNDARIES INC4 citations73
US8966423B2Feb 24, 2015
Integrating optimal planar and three-dimensional semiconductor design layouts
GLOBALFOUNDARIES INC5 citations72
US8765542B1Jul 1, 2014
Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regions
GLOBALFOUNDARIES INC4 citations72
US9343589B2May 17, 2016
Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures
GLOBALFOUNDARIES INC0 citations51
US9123772B2Sep 1, 2015
FinFET fabrication method
GLOBALFOUNDARIES INC0 citations51