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GLOBALFOUNDRIES INC
KY4,127 patents
Top patents by PatentIndex Score
US10332963B1Jun 25, 2019
Uniformity tuning of variable-height features formed in trenches
GLOBALFOUNDRIES INC346 citations99
US9947804B1Apr 17, 2018
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
GLOBALFOUNDRIES INC154 citations99
US9748145B1Aug 29, 2017
Semiconductor devices with varying threshold voltage and fabrication methods thereof
GLOBALFOUNDRIES INC494 citations99
US9620481B2Apr 11, 2017
Substrate bonding with diffusion barrier structures
GLOBALFOUNDRIES INC220 citations99
US9412616B1Aug 9, 2016
Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
GLOBALFOUNDRIES INC148 citations99
US9111907B2Aug 18, 2015
Silicide protection during contact metallization and resulting semiconductor structures
GLOBALFOUNDRIES INC174 citations99
US10840146B1Nov 17, 2020
Structures and SRAM bit cells with a buried cross-couple interconnect
GLOBALFOUNDRIES INC62 citations98
US10510620B1Dec 17, 2019
Work function metal patterning for N-P space between active nanostructures
GLOBALFOUNDRIES INC126 citations98
US10429582B1Oct 1, 2019
Waveguide-to-waveguide couplers with multiple tapers
GLOBALFOUNDRIES INC59 citations98
US10388732B1Aug 20, 2019
Nanosheet field-effect transistors including a two-dimensional semiconducting material
GLOBALFOUNDRIES INC88 citations98
US10332803B1Jun 25, 2019
Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming
GLOBALFOUNDRIES INC83 citations98
US10192867B1Jan 29, 2019
Complementary FETs with wrap around contacts and method of forming same
GLOBALFOUNDRIES INC134 citations98
US10192819B1Jan 29, 2019
Integrated circuit structure incorporating stacked field effect transistors
GLOBALFOUNDRIES INC76 citations98
US10170484B1Jan 1, 2019
Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method
GLOBALFOUNDRIES INC61 citations98
US10103238B1Oct 16, 2018
Nanosheet field-effect transistor with full dielectric isolation
GLOBALFOUNDRIES INC57 citations98
US10090193B1Oct 2, 2018
Integrated circuit structure incorporating a stacked pair of field effect transistors and a buried interconnect and method
GLOBALFOUNDRIES INC68 citations98
US10014390B1Jul 3, 2018
Inner spacer formation for nanosheet field-effect transistors with tall suspensions
GLOBALFOUNDRIES INC74 citations98
US9991352B1Jun 5, 2018
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
GLOBALFOUNDRIES INC90 citations98
US9853006B2Dec 26, 2017
Semiconductor device contact structure having stacked nickel, copper, and tin layers
GLOBALFOUNDRIES INC47 citations98
US9847390B1Dec 19, 2017
Self-aligned wrap-around contacts for nanosheet devices
GLOBALFOUNDRIES INC74 citations98
US9780208B1Oct 3, 2017
Method and structure of forming self-aligned RMG gate for VFET
GLOBALFOUNDRIES INC60 citations98
US9773708B1Sep 26, 2017
Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPI
GLOBALFOUNDRIES INC75 citations98
US9653583B1May 16, 2017
Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices
GLOBALFOUNDRIES INC79 citations98
US9640636B1May 2, 2017
Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device
GLOBALFOUNDRIES INC88 citations98
US9613861B2Apr 4, 2017
Damascene wires with top via structures
GLOBALFOUNDRIES INC60 citations98
US9576952B2Feb 21, 2017
Integrated circuits with varying gate structures and fabrication methods
GLOBALFOUNDRIES INC421 citations98
US9397003B1Jul 19, 2016
Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniques
GLOBALFOUNDRIES INC79 citations98
US9396991B2Jul 19, 2016
Multilayered contact structure having nickel, copper, and nickel-iron layers
GLOBALFOUNDRIES INC46 citations98
US9368496B1Jun 14, 2016
Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devices
GLOBALFOUNDRIES INC77 citations98
US9369488B2Jun 14, 2016
Policy enforcement using natural language processing
GLOBALFOUNDRIES INC306 citations98
US9361921B2Jun 7, 2016
Tape servo track write compensation
GLOBALFOUNDRIES INC44 citations98
US9362181B1Jun 7, 2016
Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
GLOBALFOUNDRIES INC69 citations98
US9362180B2Jun 7, 2016
Integrated circuit having multiple threshold voltages
GLOBALFOUNDRIES INC425 citations98
US9337099B1May 10, 2016
Special constructs for continuous non-uniform active region FinFET standard cells
GLOBALFOUNDRIES INC53 citations98
US9245885B1Jan 26, 2016
Methods of forming lateral and vertical FinFET devices and the resulting product
GLOBALFOUNDRIES INC60 citations98
US9093467B1Jul 28, 2015
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
GLOBALFOUNDRIES INC68 citations98
US9012319B1Apr 21, 2015
Methods of forming gate structures with multiple work functions and the resulting products
GLOBALFOUNDRIES INC105 citations98
US8954913B1Feb 10, 2015
Methods of generating circuit layouts that are to be manufactured using SADP routing techniques and virtual non-mandrel mask rules
GLOBALFOUNDRIES INC43 citations98
US8703557B1Apr 22, 2014
Methods of removing dummy fin structures when forming finFET devices
GLOBALFOUNDRIES INC63 citations98
US8674413B1Mar 18, 2014
Methods of forming fins and isolation regions on a FinFET semiconductor device
GLOBALFOUNDRIES INC54 citations98
US7829460B2Nov 9, 2010
Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
GLOBALFOUNDRIES INC467 citations98
US10510622B1Dec 17, 2019
Vertically stacked complementary-FET device with independent gate control
GLOBALFOUNDRIES INC46 citations97
US10483154B1Nov 19, 2019
Front-end-of-line device structure and method of forming such a front-end-of-line device structure
GLOBALFOUNDRIES INC399 citations97
US10332747B1Jun 25, 2019
Selective titanium nitride deposition using oxides of lanthanum masks
GLOBALFOUNDRIES INC287 citations97
US10256158B1Apr 9, 2019
Insulated epitaxial structures in nanosheet complementary field effect transistors
GLOBALFOUNDRIES INC68 citations97
US10192779B1Jan 29, 2019
Bulk substrates with a self-aligned buried polycrystalline layer
GLOBALFOUNDRIES INC71 citations97
US10026824B1Jul 17, 2018
Air-gap gate sidewall spacer and method
GLOBALFOUNDRIES INC53 citations97
US9984936B1May 29, 2018
Methods of forming an isolated nano-sheet transistor device and the resulting device
GLOBALFOUNDRIES INC91 citations97
US9911736B1Mar 6, 2018
Method of forming field effect transistors with replacement metal gates and contacts and resulting structure
GLOBALFOUNDRIES INC86 citations97
US9536793B1Jan 3, 2017
Self-aligned gate-first VFETs using a gate spacer recess
GLOBALFOUNDRIES INC74 citations97
Showing the top 50 of 4,127 patents by PatentIndex Score.