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GRANDIS INC
US70 patents
Top patents by PatentIndex Score
US7576956B2Aug 18, 2009
Magnetic tunnel junction having diffusion stop layer
GRANDIS INC215 citations99
US7515457B2Apr 7, 2009
Current driven memory cells having enhanced current and enhanced current symmetry
GRANDIS INC224 citations99
US7502249B1Mar 10, 2009
Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
GRANDIS INC315 citations99
US7489541B2Feb 10, 2009
Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
GRANDIS INC157 citations99
US7486552B2Feb 3, 2009
Method and system for providing a spin transfer device with improved switching characteristics
GRANDIS INC185 citations99
US7369427B2May 6, 2008
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC201 citations99
US7345912B2Mar 18, 2008
Method and system for providing a magnetic memory structure utilizing spin transfer
GRANDIS INC236 citations99
US7286395B2Oct 23, 2007
Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
GRANDIS INC196 citations99
US7282755B2Oct 16, 2007
Stress assisted current driven switching for magnetic memory applications
GRANDIS INC180 citations99
US7272035B1Sep 18, 2007
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
GRANDIS INC251 citations99
US7272034B1Sep 18, 2007
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
GRANDIS INC243 citations99
US7245462B2Jul 17, 2007
Magnetoresistive element having reduced spin transfer induced noise
GRANDIS INC152 citations99
US7241631B2Jul 10, 2007
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
GRANDIS INC189 citations99
US7242045B2Jul 10, 2007
Spin transfer magnetic element having low saturation magnetization free layers
GRANDIS INC220 citations99
US7233039B2Jun 19, 2007
Spin transfer magnetic elements with spin depolarization layers
GRANDIS INC171 citations99
US7230845B1Jun 12, 2007
Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
GRANDIS INC158 citations99
US7227773B1Jun 5, 2007
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
GRANDIS INC154 citations99
US7190611B2Mar 13, 2007
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
GRANDIS INC283 citations99
US7187577B1Mar 6, 2007
Method and system for providing current balanced writing for memory cells and magnetic devices
GRANDIS INC393 citations99
US7161829B2Jan 9, 2007
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
GRANDIS INC175 citations99
US7126202B2Oct 24, 2006
Spin scattering and heat assisted switching of a magnetic element
GRANDIS INC163 citations99
US7110287B2Sep 19, 2006
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
GRANDIS INC193 citations99
US7106624B2Sep 12, 2006
Magnetic element utilizing spin transfer and an mram device using the magnetic element
GRANDIS INC116 citations99
US7098494B2Aug 29, 2006
Re-configurable logic elements using heat assisted magnetic tunneling elements
GRANDIS INC186 citations99
US7009877B1Mar 7, 2006
Three-terminal magnetostatically coupled spin transfer-based MRAM cell
GRANDIS INC389 citations99
US6992359B2Jan 31, 2006
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
GRANDIS INC425 citations99
US6985385B2Jan 10, 2006
Magnetic memory element utilizing spin transfer switching and storing multiple bits
GRANDIS INC331 citations99
US6967863B2Nov 22, 2005
Perpendicular magnetization magnetic element utilizing spin transfer
GRANDIS INC309 citations99
US6958927B1Oct 25, 2005
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
GRANDIS INC287 citations99
US6933155B2Aug 23, 2005
Methods for providing a sub .15 micron magnetic memory structure
GRANDIS INC263 citations99
US6920063B2Jul 19, 2005
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC201 citations99
US6888742B1May 3, 2005
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC303 citations99
US6847547B2Jan 25, 2005
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC327 citations99
US6838740B2Jan 4, 2005
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC288 citations99
US6829161B2Dec 7, 2004
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC309 citations99
US6714444B2Mar 30, 2004
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
GRANDIS INC470 citations99
US7518835B2Apr 14, 2009
Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
GRANDIS INC128 citations98
US7486551B1Feb 3, 2009
Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements
GRANDIS INC150 citations98
US7430135B2Sep 30, 2008
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
GRANDIS INC218 citations98
US7289356B2Oct 30, 2007
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
GRANDIS INC193 citations98
US7242048B2Jul 10, 2007
Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
GRANDIS INC110 citations98
US7088609B2Aug 8, 2006
Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
GRANDIS INC228 citations98
US7057921B2Jun 6, 2006
Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
GRANDIS INC212 citations98
US7379327B2May 27, 2008
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
GRANDIS INC243 citations97
US7531882B2May 12, 2009
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
GRANDIS INC42 citations96
US7224601B2May 29, 2007
Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
GRANDIS INC358 citations95
US7859034B2Dec 28, 2010
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
GRANDIS INC24 citations92
US7760474B1Jul 20, 2010
Magnetic element utilizing free layer engineering
GRANDIS INC23 citations92
US7663848B1Feb 16, 2010
Magnetic memories utilizing a magnetic element having an engineered free layer
GRANDIS INC31 citations92
US7532505B1May 12, 2009
Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
GRANDIS INC26 citations92
Showing the top 50 of 70 patents by PatentIndex Score.