Assignee
GRIGLIONE MICHELLE D
US·1 granted patent·1 pending application·0 citations·filing 2010–2012
Technology mixH10D2
Top patents by PatentIndex Score
2 records- 0137US8227319B2Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistorGRIGLIONE MICHELLE D·Filed 2010·Granted Jul 24, 2012·0 cites·20 claims
- 0235US2012115299A1Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistorGRIGLIONE MICHELLE D·Filed 2012·Application pending·0 cites
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