Assignee
HAHN MEITNER INST BERLIN GMBH
DE·10 granted patents·4 pending applications·165 citations·filing 1985–2006
Top patents by PatentIndex Score
14 records- 0180US7019207B2Method for producing a solar module with thin-film solar cells which are series-connected in an integrated manner and solar modules produced according to the method, especially using concentrator modulesHAHN MEITNER INST BERLIN GMBH·Filed 2001·Granted Mar 28, 2006·51 cites·11 claims
- 0273US4788581AMOS dosimeterHAHN MEITNER INST BERLIN GMBH·Filed 1985·Granted Nov 29, 1988·38 cites·18 claims
- 0371US4704576AMicrowave measuring and apparatus for contactless non-destructive testing of photosensitive materialsHAHN MEITNER INST BERLIN GMBH·Filed 1985·Granted Nov 3, 1987·36 cites·21 claims
- 0456US4687881ASolar cells based on CuInS2HAHN MEITNER INST BERLIN GMBH·Filed 1986·Granted Aug 18, 1987·19 cites·14 claims
- 0546US7030397B2Neutron-optical component array for the specific spectral shaping of neutron beams or pulsesHAHN MEITNER INST BERLIN GMBH·Filed 2003·Granted Apr 18, 2006·5 cites·8 claims
- 0643US2008286490A1Production of a Platinum-Free Chelate Catalyst Material as an Intermediate Product, and Further Processing Thereof to Obtain an Electrocatalytic Coating as a Final ProductHAHN MEITNER INST BERLIN GMBH·Filed 2006·Application pending·0 cites
- 0740US4700311ASystem for optimizing process parameters in photoactive semiconductor manufacturing in-situHAHN MEITNER INST BERLIN GMBH·Filed 1985·Granted Oct 13, 1987·11 cites·7 claims
- 0840US2009014063A1Method for production of a single-sided contact solar cell and single-sided contact solar cellHAHN MEITNER INST BERLIN GMBH·Filed 2006·Application pending·0 cites
- 0933US2008156370A1Heterocontact Solar Cell with Inverted Geometry of its Layer StructureHAHN MEITNER INST BERLIN GMBH·Filed 2006·Application pending·0 cites
- 1031US7214948B2Neutron optical component for the small angle neutron scattering measuring techniqueHAHN MEITNER INST BERLIN GMBH·Filed 2003·Granted May 8, 2007·0 cites·15 claims
- 1130US2006269688A1Electrochemical method for the direct nanostructured deposition of material onto a substrate, and semiconductor component produced according to said methodHAHN MEITNER INST BERLIN GMBH·Filed 2004·Application pending·0 cites
- 1225US4663830AForming deep buried grids of implanted zones being vertically and laterally offset by mask MEV implantHAHN MEITNER INST BERLIN GMBH·Filed 1985·Granted May 12, 1987·2 cites·7 claims
- 1323US6767522B1Method for leaching sulfide-containing materials with microorganisms and use of sulphur-containing amino acids in leaching with microorganismsHAHN MEITNER INST BERLIN GMBH·Filed 1999·Granted Jul 27, 2004·3 cites·13 claims
- 1422US7807494B2Method for producing a chalcogenide-semiconductor layer of the ABC2 type with optical process monitoringHAHN MEITNER INST BERLIN GMBH·Filed 2002·Granted Oct 5, 2010·0 cites·4 claims
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