Assignee
HARAME DAVID L
US·6 granted patents·20 citations·filing 2010–2012
Top patents by PatentIndex Score
6 records- 0194US8546240B2Methods of manufacturing integrated semiconductor devices with single crystalline beamHARAME DAVID L·Filed 2011·Granted Oct 1, 2013·14 cites·17 claims
- 0273US8871600B2Schottky barrier diodes with a guard ring formed by selective epitaxyHARAME DAVID L·Filed 2011·Granted Oct 28, 2014·3 cites·11 claims
- 0371US8513084B2Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistorHARAME DAVID L·Filed 2010·Granted Aug 20, 2013·2 cites·23 claims
- 0463US9105751B2Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structureHARAME DAVID L·Filed 2011·Granted Aug 11, 2015·1 cites·20 claims
- 0547US8921194B2PNP bipolar junction transistor fabrication using selective epitaxyHARAME DAVID L·Filed 2011·Granted Dec 30, 2014·0 cites·14 claims
- 0644US8841750B2Local wiring for a bipolar junction transistor including a self-aligned emitter regionHARAME DAVID L·Filed 2012·Granted Sep 23, 2014·0 cites·20 claims
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