Assignee
HAUTALA JOHN J
US·9 granted patents·1 pending application·81 citations·filing 2008–2011
Top patents by PatentIndex Score
10 records- 0195US8237136B2Method and system for tilting a substrate during gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Aug 7, 2012·35 cites·13 claims
- 0290US8592784B2Method for modifying a material layer using gas cluster ion beam processingHAUTALA JOHN J·Filed 2011·Granted Nov 26, 2013·11 cites·19 claims
- 0390US8313663B2Surface profile adjustment using gas cluster ion beam processingHAUTALA JOHN J·Filed 2008·Granted Nov 20, 2012·13 cites·20 claims
- 0487US8691700B2Gas cluster ion beam etch profile control using beam divergenceHAUTALA JOHN J·Filed 2011·Granted Apr 8, 2014·8 cites·18 claims
- 0574US8877299B2Method for enhancing a substrate using gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Nov 4, 2014·4 cites·17 claims
- 0670US8481340B2Method for preparing a light-emitting device using gas cluster ion beam processingHAUTALA JOHN J·Filed 2011·Granted Jul 9, 2013·1 cites·31 claims
- 0768US8992785B2Method for modifying an etch rate of a material layer using energetic charged particlesHAUTALA JOHN J·Filed 2010·Granted Mar 31, 2015·2 cites·18 claims
- 0863US8226835B2Ultra-thin film formation using gas cluster ion beam processingHAUTALA JOHN J·Filed 2009·Granted Jul 24, 2012·7 cites·23 claims
- 0956US9103031B2Method and system for growing a thin film using a gas cluster ion beamHAUTALA JOHN J·Filed 2008·Granted Aug 11, 2015·0 cites·20 claims
- 1048US2012225532A1Method for controlling a resistive property in a resistive element using a gas cluster ion beamHAUTALA JOHN J·Filed 2011·Application pending·0 cites
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