Assignee
HEINRICH JENS
DE·12 granted patents·2 pending applications·34 citations·filing 2007–2013
Top patents by PatentIndex Score
14 records- 0186US8182709B2CMP system and method using individually controlled temperature zonesHEINRICH JENS·Filed 2008·Granted May 22, 2012·11 cites·18 claims
- 0283US8138038B2Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted Mar 20, 2012·8 cites·22 claims
- 0378US8716079B2Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted May 6, 2014·6 cites·11 claims
- 0469US8877597B2Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantationHEINRICH JENS·Filed 2011·Granted Nov 4, 2014·2 cites·17 claims
- 0566US8492269B2Hybrid contact structure with low aspect ratio contacts in a semiconductor deviceHEINRICH JENS·Filed 2011·Granted Jul 23, 2013·2 cites·15 claims
- 0663US8338306B2Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistorsHEINRICH JENS·Filed 2010·Granted Dec 25, 2012·2 cites·16 claims
- 0760US8536052B2Semiconductor device comprising contact elements with silicided sidewall regionsHEINRICH JENS·Filed 2011·Granted Sep 17, 2013·1 cites·15 claims
- 0859US8749330B2Electric contact element and method for producing an electric contact elementHEINRICH JENS·Filed 2011·Granted Jun 10, 2014·1 cites·19 claims
- 0958US8436425B2SOI semiconductor device comprising substrate diodes having a topography tolerant contact structureHEINRICH JENS·Filed 2010·Granted May 7, 2013·1 cites·20 claims
- 1053US9153684B2Semiconductor fuses in a semiconductor device comprising metal gatesHEINRICH JENS·Filed 2013·Granted Oct 6, 2015·0 cites·15 claims
- 1141US2008242195A1Cmp system having an eddy current sensor of reduced heightHEINRICH JENS·Filed 2007·Application pending·0 cites
- 1240US8922023B2Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materialsHEINRICH JENS·Filed 2013·Granted Dec 30, 2014·0 cites·15 claims
- 1338US8329526B2Cap removal in a high-k metal gate electrode structure by using a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted Dec 11, 2012·0 cites·17 claims
- 1437US2012153405A1Semiconductor Device Comprising a Contact Structure with Reduced Parasitic CapacitanceHEINRICH JENS·Filed 2011·Application pending·0 cites
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