Assignee

HEINTZE MORITZ

DE·1 granted patent·0 citations·filing 2006–2006

Technology mixH10F1 H10P1 Y02E1 Y02P1

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0128US8211323B2Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafersHEINTZE MORITZ·Filed 2006·Granted Jul 3, 2012·0 cites·25 claims

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