Assignee
HIGUCHI YASUSHI
JP·2 granted patents·2 citations·filing 2012–2012
Top patents by PatentIndex Score
2 records- 0160US9178050B2Load-short-circuit-tolerant semiconductor device having trench gatesHIGUCHI YASUSHI·Filed 2012·Granted Nov 3, 2015·2 cites·8 claims
- 0235US8815737B2Method for forming NiSi film, method for forming silicide film, method for forming metal film for use in silicide-annealing, apparatus for vacuum processing and film-forming apparatusHIGUCHI YASUSHI·Filed 2012·Granted Aug 26, 2014·0 cites·7 claims
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